X-On Electronics has gained recognition as a prominent supplier of BC546BZL1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC546BZL1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC546BZL1G ON Semiconductor

BC546BZL1G electronic component of ON Semiconductor
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Part No.BC546BZL1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100mA 80V NPN
Datasheet: BC546BZL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.6955 ea
Line Total: USD 3.48 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 5
Multiples : 1
5 : USD 0.6955
25 : USD 0.2505
100 : USD 0.1297
1000 : USD 0.0843
3000 : USD 0.0701
9000 : USD 0.0605

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3206
Multiples : 1
3206 : USD 0.0985

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Pin Configuration
Power Dissipation Ptot Max
Voltage Vcbo
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC546BZL1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC546BZL1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA, I = 0) BC546 65 C B BC547 45 BC548 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC546 80 C BC547 50 BC548 30 Emitter Base Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) BC546 6.0 E C BC547 6.0 BC548 6.0 Collector Cutoff Current I CES (V = 70 V, V = 0) BC546 0.2 15 nA CE BE (V = 50 V, V = 0) BC547 0.2 15 CE BE (V = 35 V, V = 0) BC548 0.2 15 CE BE (V = 30 V, T = 125C) BC546/547/548 4.0 A CE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) BC547A 90 C CE BC546B/547B/548B 150 BC548C 270 (I = 2.0 mA, V = 5.0 V) BC546 110 450 C CE BC547 110 800 110 800 BC548 BC547A 110 180 220 BC546B/547B/548B 200 290 450 BC547C/BC548C 420 520 800 (I = 100 mA, V = 5.0 V) BC547A/548A 120 C CE BC546B/547B/548B 180 BC548C 300 Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.09 0.25 C B (I = 100 mA, I = 5.0 mA) 0.2 0.6 C B (I = 10 mA, I = See Note 1) 0.3 0.6 C B Base Emitter Saturation Voltage V 0.7 V BE(sat) (I = 10 mA, I = 0.5 mA) C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.55 0.7 C CE (I = 10 mA, V = 5.0 V) 0.77 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC546 150 300 C CE BC547 150 300 BC548 150 300 Output Capacitance C 1.7 4.5 pF obo (V = 10 V, I = 0, f = 1.0 MHz) CB C Input Capacitance C 10 pF ibo (V = 0.5 V, I = 0, f = 1.0 MHz) EB C Small Signal Current Gain h fe (I = 2.0 mA, V = 5.0 V, f = 1.0 kHz) BC546 125 500 C CE BC547/548 125 900 BC547A 125 220 260 BC546B/547B/548B 240 330 500 BC547C/548C 450 600 900 Noise Figure (I = 0.2 mA, V = 5.0 V, R = 2 k , f = 1.0 kHz, f = 200 Hz) NF dB C CE S 2.0 10 BC546 BC547 2.0 10 BC548 2.0 10 1. I is value for which I = 11 mA at V = 1.0 V. B C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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