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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain : h = 1000 V = -4V, I = -5A (Min.) FE CE C Industrial Use Complement to TIP140F/141F/142F TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Emitter Voltage : TIP145F - 60 V CBO : TIP146F - 80 V : TIP147F - 100 V B V Collector-Emitter Voltage : TIP145F - 60 V CEO : TIP146F - 80 V : TIP147F - 100 V V Emitter-Base Voltage - 5 V EBO R1 R2 I Collector Current (DC) - 10 A C E R18 k I Collector Current (Pulse) - 15 A CP R20 .12k I Base Current (DC) - 0.5 A B P Collector Dissipation (T =25C) 60 W C C T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP145F I = - 30mA, I = 0 - 60 V C B : TIP146F - 80 V : TIP147F - 100 V I Collector Cut-off Current CEO : TIP145F V = - 30V, I = 0 - 2 mA CE B : TIP146F V = - 40V, I = 0 - 2 mA CE B : TIP147F V = - 50V, I = 0 - 2 mA CE B I Collector Cut-off Current CBO : TIP145F V = - 60V, I = 0 - 1 mA CB E : TIP146F V = - 80V, I = 0 - 1 mA CB E : TIP147F V = - 100V, I = 0 - 1 mA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO BE C h DC Current Gain V = - 4V, I = - 5A 1000 FE CE C V = - 4V, I = - 10A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = - 5A, I = - 10mA - 2 V CE C B I = - 10A, I = - 40mA - 3 V C B V (sat) Base-Emitter Saturation Voltage I = - 10A, I = - 40mA - 3.5 V BE C B V (on) Base-Emitter On Voltage V = - 4V, I = - 10A - 3 V BE CE C t Delay Time V = - 30V, I = - 5A 0.15 s D CC C I = -20mA, I = 20mA t Rise Time B1 B2 0.55 s R R = 6 L t Storage Time 2.5 s STG t Fall Time 2.5 s f 2002 Fairchild Semiconductor Corporation Rev. B, December 2002