TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO220 package. www.onsemi.com Features 1 AMPERE These Devices are PbFree and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Collector Emitter Voltage V Vdc 80 WATTS CEO TIP29G, TIP30G 40 TIP29AG, TIP30AG 60 PNP NPN TIP29BG, TIP30BG 80 TIP29CG, TIP30CG 100 COLLECTOR COLLECTOR 2,4 2,4 Collector Base Voltage V Vdc CB TIP29G, TIP30G 40 TIP29AG, TIP30AG 60 TIP29BG, TIP30BG 80 1 1 TIP29CG, TIP30CG 100 BASE BASE Emitter Base Voltage V 5.0 Vdc EB 3 Collector Current Continuous I 1.0 Adc 3 C EMITTER EMITTER Collector Current Peak I 3.0 Adc CM Base Current I 0.4 Adc B Total Power Dissipation P D T = 25C 30 W 4 C Derate above 25C 0.24 W/C TO220 CASE 221A Total Power Dissipation P D T = 25C 2.0 W STYLE 1 A Derate above 25C 0.016 W/C 1 Unclamped Inductive Load Energy E 32 mJ 2 3 (Note 1) Operating and Storage Junction T , T 65 to +150 C J stg MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with L = 20 mH, R = 100 , V = 10 V, C BE CC I = 1.8 A, P.R.F = 10 Hz TIPxxxG C AYWW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient 62.5 C/W R JA TIPxxx = Device Code: Thermal Resistance, JunctiontoCase R 4.167 C/W JC 29, 29A, 29B, 29C 30, 30A, 30B, 30C A = Assembly Location Y = Year WW = Work Week G=PbFree Package *For additional information on our PbFree strategy and soldering details, please ORDERING INFORMATION download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 13 TIP29B/DTIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 30 mAdc, I = 0) (Note 2) C B TIP29G, TIP30G 40 TIP29AG, TIP30AG 60 TIP29BG, TIP30BG 80 TIP29CG, TIP30CG 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) CE B TIP29G, TIP29AG, TIP30G, TIP30AG 0.3 (V = 60 Vdc, I = 0) CE B TIP29BG, TIP29CG, TIP30BG, TIP30CG 0.3 Collector Cutoff Current I Adc CES (V = 40 Vdc, V = 0) CE EB TIP29G, TIP30G 200 (V = 60 Vdc, V = 0) CE EB TIP29AG, TIP30AG 200 (V = 80 Vdc, V = 0) CE EB TIP29BG, TIP30BG 200 (V = 100 Vdc, V = 0) CE EB TIP29CG, TIP30CG 200 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.2 Adc, V = 4.0 Vdc) 40 C CE (I = 1.0 Adc, V = 4.0 Vdc) 15 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 125 mAdc) 0.7 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 4.0 Vdc) 1.3 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 3) f MHz T (I = 200 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE test SmallSignal Current Gain h fe (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 3. f = h f T fe test www.onsemi.com 2