BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level: 1 ESD Rating Human Body Model: > 4000 V ESD Rating Machine Model: > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage V Vdc CEO 1 BC846 65 2 BC847, BC850 45 BC848, BC849 30 SOT23 CASE 318 CollectorBase Voltage V Vdc CBO STYLE 6 BC846 80 BC847, BC850 50 BC848, BC849 30 MARKING DIAGRAM EmitterBase Voltage V Vdc EBO BC846 6.0 BC847, BC850 6.0 XX M BC848, BC849 5.0 Collector Current Continuous I 100 mAdc C 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation and/or overbar may vary depending upon manufacturing location. Total Device Dissipation FR5 Board, P 225 mW D (Note 1) T = 25C A Derate above 25C 1.8 mW/C ORDERING INFORMATION See detailed ordering and shipping information in the package Thermal Resistance, R 556 C/W JA dimensions section on page 12 of this data sheet. JunctiontoAmbient (Note 1) Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA JunctiontoAmbient (Note 2) Junction and Storage T , T 55 to C J stg Temperature Range +150 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: January, 2017 Rev. 17 BC846ALT1/DBC846ALT1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BC846A, B V 65 V (BR)CEO (I = 10 mA) BC847A, B, C, BC850B, C 45 C BC848A, B, C, BC849B, C 30 CollectorEmitter Breakdown Voltage BC846A, B V 80 V (BR)CES 50 (I = 10 A, V = 0) BC847A, B, C BC850B, C C EB 30 BC848A, B, C, BC849B, C CollectorBase Breakdown Voltage BC846A, B V 80 V (BR)CBO (I = 10 A) BC847A, B, C, BC850B, C 50 C BC848A, B, C, BC849B, C 30 EmitterBase Breakdown Voltage BC846A, B V 6.0 V (BR)EBO 6.0 (I = 1.0 A) BC847A, B, C, BC850B, C E 5.0 BC848A, B, C, BC849B, C Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A h 90 FE (I = 10 A, V = 5.0 V) BC846B, BC847B, BC848B 150 C CE BC847C, BC848C 270 (I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A 110 180 220 C CE BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B 420 520 800 BC847C, BC848C, BC849C, BC850C CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) BaseEmitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure (I = 0.2 mA, NF dB C V = 5.0 Vdc, R = 2.0 k , BC846A,B, BC847A,B,C, BC848A,B,C 10 CE S f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2