High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 UMT3 SMT3 hFE NP NP NP NP 2SC4725 Marking AC 1C AC AC Code TL T106 T146 T2L Basic ordering unit 8000 3000 3000 3000 (pieces) Denotes hFE (1) Emitter (2) Base ROHM : EMT3 EIAJ : SC-75A (3) Collector 2SC4082 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V (1) Emitter Collector current IC 50 mA (2) Base 2SC5661, 2SC4725 0.15 Collector power (3) Collector PC W ROHM : UMT3 dissipation 2SC4082, 2SC3837K 0.2 EIAJ : SC-70 Each lead has same dimensions Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 2.9 1.1 2SC3837K 0.4 0.8 (3) (1) Emitter (2) (1) (2) Base 0.95 0.95 0.15 (3) Collector ROHM : SMT3 1.9 EIAJ : SC-59 Each lead has same dimensions Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC = 10A Collector-emitter breakdown voltage BVCEO 20 V IC = 1mA Emitter-base breakdown voltage BVEBO 3 V IE = 10A Collector cutoff current ICBO 0.5 A VCB = 15V Emitter cutoff current IEBO 0.5 A VEB = 2V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB = 20mA/4mA DC current transfer ratio hFE 82 180 VCE/IC = 10V/10mA Transition frequency fT 600 1500 MHz VCE = 10V , IE = 10mA , f = 200MHz Output capacitance Cob 0.9 1.5 pF VCB = 10V , IE = 0A , f = 1MHz Collector-base time constant rbb Cc 613 ps VCB = 10V , IC = 10mA , f = 31.8MHz Noise factor NF 4.5 dB VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50 This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2009.12 - Rev.C 1/3 c 2009 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3Min. 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Data Sheet Electrical characteristic curves 500 5.0 500 Ta=25C Ta=25C Ta=25C VCE=10V f=1MHz IC/IB=5 IE=0A 200 2.0 200 Cob 100 1.0 100 50 0.5 50 Cre 20 0.2 20 10 10 0.1 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage Fig.3 Capacitance vs. reverse bias voltage vs. collector current 5000 Ta=25C Ta=25C 50 25 VCE=10V VCE=10V IC=10mA 20 2000 20 1000 15 10 500 10 5 5 200 2 Ta=25C VCE=10V 0 100 f=31.8MHz 0.1 0.2 0.5 1 2 5 10 1 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 FREQUENCY : f (GHz) EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Insertion gain vs. frequency Fig.4 Gain bandwidth product vs. emitter current Fig.5 Collector to base time constance vs. collector current 25 30 Ta=25C Ta=25C Ta=25C VCE=12V IC=2mA VCE=12V f=200MHz f=200MHz f=200MHz 25 20 20 20 15 15 10 10 10 5 5 0 0 0 0.5 1 2 5 10 20 50 02 4 6 8 10 12 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : Ic (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.7 Insertion gain vs. collector current Fig.8 Insertion gain vs. collector voltage Fig.9 Noise factor vs. collector current www.rohm.com 2009.12 - Rev.C 2/3 c 2009 ROHM Co., Ltd. All rights reserved. 2 DC CURRENT TRANSFER RATIO :hFE INSERTION GAIN : IS21el (dB) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) 2 INSERTION GAIN : IS21el (dB) COLLECTOR TO BASE TIME CONSTANT : Cc rbb (ps) OUTPUT CAPACITANCE :CoB (pF) 2 FEEDBACK CAPACITANCE :Cre (pF) INSERTION GAIN : IS21el (dB) NOISE FIGURE : NF(dB)