2SB1580T100 ROHM

2SB1316 Transistors Power Transistor (100V , 2A) 2SB1316 z External dimensions (Unit : mm) z Features 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980. ( ) 2 (3) (1) Base (2) Collector z Absolute maximum ratings (Ta = 25C) ROHM : MPT3 (3) Emitter Parameter Symbol Limits Unit EIAJ : SC-62 Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 8 V 2 A(DC) Collector current IC 2SB1316 3 A(Pulse) 1 5.5 1.5 2SB1580 2 Collector 2 W power PC 1 2SB1316 dissipation 10 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 0.9 1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. C0.5 z Packaging specifications and hFE 0.8Min. 1.5 Type 2SB1580 2SB1316 Package MPT3 CPT3 2.5 hFE 1k to 10k 1k to 10k Marking BN 9.5 (1) Base Code T100 TL ROHM : CPT3 (2) Collector Basic ordering unit (pieces) 1000 2500 EIAJ : SC-63 (3) Emitter Denotes hFE z Equivalent circuit C B R1 R2 E R1 3.5k B : Base C : Collector R2 300 E : Emitter z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO V IC = 50A 100 Collector-emitter breakdown voltage BVCEO 100 V IC = 5mA Emitter-base breakdown voltage BVEBO 10 V IE = 5mA 10 Collector cutoff current ICBO A VCB = 100V 3 Emitter cutoff current IEBO mA VEB = 7V Collector-emitter saturation voltage VCE(sat) 1.5 V IC/IB= 1A/1mA DC current transfer ratio hFE 1000 10000 VCE = 2V , IC = 1A Transition frequency fT 50 MHz VCE = 5V , IE =0.1A , f = 30MHz Output capacitance Cob 35 pF VCB = 10V , IE = 0A , f = 1MHz Measured using pulse current. Rev.A 1/2 1.0 ( ) ( ) ( ) 3 2 1 0.5 2.3 2.3 0.9 3.0 0.65 1.5 1.5 0.4 0.4 0.75 0.4 0.5 1.6 1.5 4.5 0.5 5.1 2.3 6.52SB1316 Transistors z Electrical characteristics curve 10k 2.0 10 Ta=25C Ta=25C 1mA Ta=25C VCE= 2V 5 VCE= 2V 5k 0.9mA 1.6 0.8mA 2k 2 0.7mA 1 1k 1.2 500 0.5 200 0.2 0.8 100 0.1 0.05 50 0.4 20 0.02 0 10 0.01 0 1 2 3 4 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics 50 1000 Ta=25C Ta=25C Ta=25C 50 Single IC / IB =1000 IE=0A 500 NONREPETITIVE 20 f=1MHz 20 PULSE 200 10 10 5 100 Ic Max. (Pulse ) 5 Pw=10ms 2 50 DC 1 2 Pw=100ms 20 500m 1 10 200m 0.5 100m 5 50m 0.2 2 20m 0.1 1 10m 0.05 0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage Fig.5 Collector output capacitance Fig.6 Safe Operating area (2SB1580) vs. collector current vs. collector-base voltage Ta=25C 50 Single NONREPETITIVE 20 PULSE 10 5 Ic Max. (Pulse ) Pw=10ms 2 DC 1 Pw=100ms 500m 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe Operating area (2SB1316) Rev.A 2/2 0.4mA IB= 0.3mA 0.6mA 0.5mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE: Cob (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hEF