X-On Electronics has gained recognition as a prominent supplier of 2SB1695KT146 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1695KT146 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1695KT146 ROHM

Hot 2SB1695KT146 electronic component of ROHM
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Part No.2SB1695KT146
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 30V 1.5A
Datasheet: 2SB1695KT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
91: USD 0.4485 ea
Line Total: USD 40.81 
Availability - 1487
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 91  Multiples: 1
Pack Size: 1

 2SB1695KT146 More Buying Options & Price Grid(s)

Availability Price Quantity
2815
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.113
50 : USD 0.0899
150 : USD 0.0786
500 : USD 0.0699
3000 : USD 0.0632
6000 : USD 0.0595

2908
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5203
10 : USD 0.3773
100 : USD 0.253
500 : USD 0.2013
1000 : USD 0.176
3000 : USD 0.1364

8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 350
Multiples : 1
350 : USD 0.2913
500 : USD 0.2809
1000 : USD 0.2717
2500 : USD 0.2637
5000 : USD 0.2566

1487
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 91
Multiples : 1
91 : USD 0.4485
142 : USD 0.2877
248 : USD 0.1642
583 : USD 0.0697
1226 : USD 0.0331

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 350
Multiples : 1
350 : USD 0.3466
500 : USD 0.2642

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1695KT146 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1695KT146 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SB1695K Datasheet Datasheet General purpose amplification(-30V,-1.5A) llOutline SOT-346 Parameter Value SC-59 V -30V CEO I -1.5A C SMT3 llFeatures llInner circuit 1) Collector current is large. 2) V -370mV CE(sat) at I = -1A / I = -50mA C B 3) Complementary NPN Types : 2SD2657K llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1695K 2928 T146 180 8 3000 FL (SMT3) www.rohm.com 1/6 www.rohm.com 20161028 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. 2015 ROHM Co., Ltd. All rights reserved.Data Sheet 2SB1695K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P Power dissipation 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -30V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB *3 Collector-emitter saturation voltage V I = -1A, I = -50mA - -200 -370 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E Transition frequency f - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 13 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20161028 - Rev.003 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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