X-On Electronics has gained recognition as a prominent supplier of 2SB1689T106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1689T106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1689T106 ROHM

Hot 2SB1689T106 electronic component of ROHM
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Part No.2SB1689T106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 1.5 A 400MHz 200 mW Surface Mount UMT3
Datasheet: 2SB1689T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0607 ea
Line Total: USD 0.3 
Availability - 903
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
903
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0607
50 : USD 0.0592
150 : USD 0.0582
500 : USD 0.0571

2990
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5489
10 : USD 0.3553
100 : USD 0.1782
1000 : USD 0.1573
3000 : USD 0.1243
9000 : USD 0.1177
24000 : USD 0.1144
45000 : USD 0.1133
99000 : USD 0.1111

2867
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 232
Multiples : 1
232 : USD 0.4585
250 : USD 0.4402
500 : USD 0.4243
1000 : USD 0.4104
2500 : USD 0.3983

10505
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 91
Multiples : 1
91 : USD 0.4485
106 : USD 0.3835
200 : USD 0.3495
500 : USD 0.2909
1000 : USD 0.26
2000 : USD 0.2422
6000 : USD 0.2015

5820
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 232
Multiples : 1
232 : USD 0.586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1689T106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1689T106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1689 Datasheet General purpose amplification (-12V, -1.5A) llOutline SOT-323 Parameter Value SC-70 V -12V CEO I -1.5A C UMT3 llFeatures llInner circuit 1)A collector current is large 2)Collector saturation voltage is low. V -200mV CE(sat) at I =-500mA/I =-25mA C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SB1689 2021 T106 180 8 3000 EV (UMT3) www.rohm.com 1/6 20160510 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. 2SB1689 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3.0 A CP *2 P Power dissipation 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -110 -200 mV CE(sat) C B *3 DC current gain V = -2V, I = -200mA 270 - 680 - h FE CE C V = -2V, I = 200mA, CE E *3 Transition frequency - 400 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Measured using pulse current. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160510 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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