X-On Electronics has gained recognition as a prominent supplier of 2SB1698T100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1698T100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1698T100 ROHM

2SB1698T100 electronic component of ROHM
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Part No.2SB1698T100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT TRANSISTOR BIPOLAR PNP; 30V; 1.5A
Datasheet: 2SB1698T100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
486: USD 0.2098 ea
Line Total: USD 101.96 
Availability - 742
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 486  Multiples: 1
Pack Size: 1

 2SB1698T100 More Buying Options & Price Grid(s)

Availability Price Quantity
323
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 117
Multiples : 1
117 : USD 0.3478
200 : USD 0.3462

742
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 486
Multiples : 1
486 : USD 0.2098
500 : USD 0.2023

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1698T100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1698T100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline MPT3 Parameter Value V -30V CEO Base I -1.5A C Collector Emitter 2SB1698 lFeatures (SC-62) <SOT-89> 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low V CE(sat) V = -0.37V(Max.) CE(sat) (I /I = -1A/ -50mA) C B 4) Lead Free/RoHS Compliant. lInner circuit lApplications Collector Motor driver , LED driver Power supply Base Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SB1698 MPT3 4540 T100 180 12 1,000 FL www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SB1698 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V V Collector-base voltage -30 CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I DC -1.5 A C Collector current *1 A Pulsed I -3 CP *2 0.5 W P D Power dissipation *3 P 2.0 W D T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg *1 Pw=1ms , single pulse *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40400.7 mm) lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = -1mA -30 - - V CEO C breakdown voltage Collector-base BV I = -10 mA -30 - - V CBO C breakdown voltage Emitter-base BV I = -10 mA -6 - - V EBO E breakdown voltage Collector cut-off current I V = -30V - - nA -100 CBO CB Emitter cut-off current I V = -6V - - nA -100 EBO EB Collector-emitter V I = -1A, I = -50mA - mV -200 -370 CE(sat) C B saturation voltage h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA CE E f Transition frequency - 280 - MHz T f=100MH Z V = -10V, I = 0A CB E C Output capacitance - 13 - pF ob f = 1MHz www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 2/6 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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