2SB1690TL ROHM

0~0.1 2SB1690 Transistors General purpose amplification(12V, 2A) 2SB1690 z Applications z External dimensions (Unit : mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 z Features ( ) 3 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 VCE(sat) : max. 180mV 0.95 0.95 0.16 1.9 at IC= 1A / IB= 50mA (1) Base (2) Emitter Each lead has same dimensions (3) Collector z Packaging specifications Package Taping Type Code TL Quantity (pcs) 3000 2SB1690 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 0.5 W 2 Collector power dissipation PC 3 1 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=1ms 2 Each terminal mounted on a recommended land t 3 Mounted on a 25mm25mm 0.8mm ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Typ. Max. Unit Conditions Min. Collector-base breakdown voltage BVCBO 15 V IC=10A Collector-emitter breakdown viltage BVCEO 12 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A Collector cutoff current ICBO 100 nA VCB=15V Emitter cutoff current IEBO 100 nA VEB=6V Collerctor-emitter saturation voltage VCE(sat) 120 180 mV IC=1A, IB=50mA DC current transfer ratio hFE 270 680 VCE=2V, IC=200mA Transition frequency fT 360 MHz VCE=2V, IE=200mA, f=100MHz Output capacitance Cob 15 pF VCB=10V, IE=0mA, f=1MHz Pulsed 20190527-Rev .C1/2 1.6 2.8 0.3~0.62SB1690 Transistors z Electrical characteristic curves 1 1000 10 IC/IB=20 Ta=25C VCE=2V Ta=100C PULSED PULSED PULSED 25C 1 0.1 40C 25C 40C IC/IB=50/1 Ta=100C 0.1 IC/IB=20/1 Ta=100C IC/IB=10/1 25C 40C 0.01 0.01 0.001 0.001 100 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 110 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage Fig.2 Collector-emitter saturation voltage Fig.1 DC current gain vs. collector current base-emitter saturation voltage vs. collector current vs.collector current 10 1000 1000 VCE=2V Ta=25C IC=20 IB1=-20IB2 PULSED VCE=2V Ta=25C f=100MHz f=100MHz tstg 1 Ta=100C tr 100 25C tf 40C 0.1 100 tdon 10 0.01 0.001 10 1 0 0.5 1 0.001 0.01 0.1 110 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter current 1000 Ta=25C IE=0mA f=1MHz cib 100 cob 10 0.1 1 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20190527-Rev .C2/2 COLLECTOR CURRENT IC : (A) DC CURRENT GAIN : hFE EMITTER INPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob(pF) TRANSITION FREQUENCY : fT : (MHz) BASE SATURATION VOLTAGE : VBE(sat) : (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat): (V)