X-On Electronics has gained recognition as a prominent supplier of 2SB1697T100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1697T100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1697T100 ROHM

2SB1697T100 electronic component of ROHM
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See Product Specifications
Part No.2SB1697T100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 2 A 360MHz 500 mW Surface Mount MPT3
Datasheet: 2SB1697T100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.781 ea
Line Total: USD 0.78 
Availability - 541
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
541
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.781
10 : USD 0.5401
100 : USD 0.3971
500 : USD 0.3201
1000 : USD 0.2156
2000 : USD 0.2046
10000 : USD 0.2035
50000 : USD 0.198

388
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 49
Multiples : 1
49 : USD 0.8402
57 : USD 0.7183
100 : USD 0.6955

920
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 355
Multiples : 1
355 : USD 0.4875

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1697T100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1697T100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1697 Datasheet Middle Power Transistor (-12V / -2A) llOutline SOT-89 Parameter Value SC-62 V -12V CEO I -2A C MPT3 llFeatures llInner circuit Low V -180mV CE(sat) (I /I =-1A/-50mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SB1697 4540 T100 180 12 1000 FV (MPT3) www.rohm.com 1/6 20151221 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SB1697 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -100 -180 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E Transition frequency f - 360 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151221 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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