2SB1697 Datasheet Middle Power Transistor (-12V / -2A) llOutline SOT-89 Parameter Value SC-62 V -12V CEO I -2A C MPT3 llFeatures llInner circuit Low V -180mV CE(sat) (I /I =-1A/-50mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SB1697 4540 T100 180 12 1000 FV (MPT3) www.rohm.com 1/6 20151221 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SB1697 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -100 -180 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E Transition frequency f - 360 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151221 - Rev.002