X-On Electronics has gained recognition as a prominent supplier of 2SB1382 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2SB1382 Darlington Transistors are a product manufactured by Sanken. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2SB1382 Sanken

2SB1382 electronic component of Sanken
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Part No.2SB1382
Manufacturer: Sanken
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 120 V 16 A 50MHz 75 W Through Hole TO-3PF
Datasheet: 2SB1382 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.904 ea
Line Total: USD 3.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 3.904
10 : USD 3.3834
100 : USD 2.7191

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 4.8364
3 : USD 4.5802
6 : USD 4.4234
10 : USD 4.2979

   
Manufacturer
Product Category
Kind Of Transistor
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1382 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1382 and other electronic components in the Darlington Transistors category and beyond.

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With Infinite heatsink 100s 1ms 10ms DC Typ E (2k) (80) B Darlington 2SB1382 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose External Dimensions FM100(TO3PF) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Ratings Unit Symbol Conditions Unit 0.2 5.50.2 15.6 0.2 3.45 VCBO 120 V ICBO VCB=120V 10max m A VCEO 120 IEBO VEB=6V 10max V mA VEBO 6 V V(BR)CEO IC=10mA 120min V 0.2 3.3 IC 16(Pulse26) hFE VCE=4V, IC=8A 2000min A a b IB 1.5max 1 A VCE(sat) IC=8A, IB=16mA V PC 75(Tc=25C) VBE(sat) IC=8A, IB=16mA 2.5max V W 1.75 Tj fT VCE=12V, IE=1A 50typ 0.8 150 C MHz 2.15 Tstg 55 to +150 COB VCB=10V, f=1MHz 350typ pF C +0.2 1.05 -0.1 +0.2 0.1 0.1 0.65 5.45 5.45 -0.1 3.35 n Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 6.5g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. BEC b. Lot No. 40 5 8 10 5 16 16 0.8typ 1.8typ 1.0typ I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 26 3 16 20 12 2 I C=16A 8 8A 10 4A 1 4 0 0 0 0 1 2 3 4 5 6 0.5 1 10 100 0 1 2 2.4 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 3 20000 20000 10000 10000 5000 5000 1 0.5 1000 1000 500 500 0.2 0.3 0.5 1 5 10 16 0.3 0.5 1 5 10 16 1 10 100 1000 Collector Current I C(A) Collector Current I C(A) Time t(ms) f T IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc Ta Derating (VCE=12V) 100 80 50 10 60 5 50 40 1 0.5 Without Heatsink 20 Natural Cooling 0.1 Without Heatsink 0.05 3.5 0.03 0 0 3 5 10 50 100 200 0.05 0.1 0.5 1 5 10 16 0 50 100 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 44 Typ I B=1.5mA 3mA 6mA 12mA 30C 25C 125C 20mA 40mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Cut-off Frequency f T(MH Z) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 16.2 23.0 9.50.2 1.6 0.80.2 3.3 5.5 3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Electric
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