SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage V CES 30 Collector-base voltage V CBO Emitter-base voltage V 10 EBO 300 mA Collector current I C 500 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 330 mW Total power dissipation- P tot T 81 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-12-19 1SMBTA14/MMBTA14 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base breakdown voltage V 30 - - V (BR)CBO I = 10 A, I = 0 C E Collector-emitter breakdown voltage V 30 - - (BR)CES I = 10 A, V = 0 C BE Emitter-base breakdown voltage V 10 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 30 V, I = 0 - - 0.1 CB E V = 30 V, I = 0 , T = 150 C - - 10 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 10 V, I = 0 EB C 1) - DC current gain h FE I = 10 mA, V = 5 V 10000 - - C CE I = 100 mA, V = 5 V 20000 - - C CE 1) Collector-emitter saturation voltage V - - 1.5 V CEsat I = 100 mA, I = 0.1 mA C B 1) Base emitter saturation voltage V - - 2 BEsat I = 100 mA, I = 0.1 mA C B AC Characteristics 125 - - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 20 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 100 MHz CB 1 Pulse test: t < 300s D < 2% 2011-12-19 2