2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor (100V, 2A) 2SD2195 / 2SD1980 / 2SD1867 z Features z External dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD2195 2) Built-in resistor between base and emitter. 4.5 1.5 1.6 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316. (1) (2) (3) 0.4 z Equivalent circuit 0.5 0.4 0.4 (1) Base 1.5 1.5 C (2) Collector ROHM : MPT3 3.0 (3) Emitter EIAJ : SC-62 B 2SD1980 6.5 R1 R2 5.1 2.3 E 0.5 R1 3.5k B : Base C : Collector R2 300 E : Emitter z Absolute maximum ratings (Ta=25C) 0.75 Parameter Symbol Limits Unit 0.65 0.9 2.3 VCBO Collector-base voltage 100 V 2.3 (1) (2) (3) 0.5 1.0 Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V (1) Base 2 A(DC) (2) Collector Collector current IC ROHM : CPT3 1 (3) Emitter 3 A(Pulse) EIAJ : SC-63 0.5 2SD2195 W 2 2 Collector power PC 1 2SD1980 W(Tc=25C) dissipation 2SD1867 10 2.5 6.8 3 2SD1867 1 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. 2 3 Printed circuit board, 1.7mm thick, collector plating 100mm or larger. 0.65Max. 0.5 ( ) ( ) (1) 2 3 2.54 2.54 1.05 0.45 Taping specifications (1) Emitter ROHM : ATV (2) Collector (3) Base Rev.B 1/3 0.9 5.5 1.5 1.0 0.9 0.5 1.0 2.5 4.0 4.4 14.5 0.8Min. 2.5 1.5 9.52SD2195 / 2SD1980 / 2SD1867 Transistors z Packaging specifications and hFE Type 2SD2195 2SD1980 2SD1867 Package MPT3 CPT3 ATV hFE 1k to 10k 1k to 10k 1k to 10k Marking DP Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 Denotes hFE z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 100 V IC = 50A Collector-emitter breakdown voltage BVCBO 100 V IC = 5mA Emitter-base breakdown voltage BVEBO 6 V IE = 5mA Collector cutoff current ICBO 10 A VCB = 100V Emitter cutoff current IEBO 3 mA VEB = 5V Collector-emitter saturation voltag VCE(sat) 1.5 V IC = 1A , IB = 1mA Base-Emitter saturation voltage VBE(sat) 2.0 V IC/IB = 1A/1mA DC current transfer ratio hFE 1000 10000 VCE = 2V , IC = 1A Transition frequency fT 80 MHz VCE = 5V , IE = 0.1A , f = 30MHz Output capacitance Cob 25 pF VCB = 10V , IE = 0A , f = 1MHz Measured using pulse current. z Electrical characteristic curves 2.0 10 10000 Ta=25C VCE=2V Ta=25C 5 5000 VCE=4V 1.6 2 2V 2000 1 1000 1.2 0.5 500 0.2 0.8 200 0.1 100 50 0.05 0.4 0.02 20 0 0.01 10 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 1 23 4 5 0.001 0.01 0.1 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics characteristics 10000 100 100 VCE=2V Ta=25C IC/IB=1000 5000 50 50 2000 20 20 10 10 1000 500 5 5 IC/IB=1000 Ta=25C 200 2 2 25C 500 100 1 1 100C 50 0.5 0.5 20 0.2 0.2 10 0.1 0.1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.6 Collector-emitter saturation voltage Fig.5 Collector-emitter saturation voltage vs.collector current vs.collector current Rev.B 2/3 IB=0.3mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 1mA Ta=100C 25C 25C Ta=100C 25C 25C COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)