X-On Electronics has gained recognition as a prominent supplier of 2SD2226KT146V Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2226KT146V Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2226KT146V ROHM

2SD2226KT146V electronic component of ROHM
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Part No.2SD2226KT146V
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 150 mA 250MHz 200 mW Surface Mount SMT3
Datasheet: 2SD2226KT146V Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1113 ea
Line Total: USD 0.56 
Availability - 2376
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 5  Multiples: 5
Pack Size: 5

 2SD2226KT146V More Buying Options & Price Grid(s)

Availability Price Quantity
2376
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1113
50 : USD 0.0933
150 : USD 0.0844
500 : USD 0.0777
3000 : USD 0.0695
6000 : USD 0.0667

690
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3894
100 : USD 0.2596
500 : USD 0.2002
1000 : USD 0.1771
3000 : USD 0.1408
9000 : USD 0.1342
45000 : USD 0.1309

1834
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 124
Multiples : 1
124 : USD 0.3299
200 : USD 0.3007
500 : USD 0.2585
1000 : USD 0.2438

2910
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 204
Multiples : 1
204 : USD 0.5222
250 : USD 0.5013
500 : USD 0.4832
1000 : USD 0.4675
2500 : USD 0.4536

44
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 46
Multiples : 1
46 : USD 2.1298

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2226KT146V from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2226KT146V and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2226K General Purpose Transistor (50V, 150mA) Datasheet llOutline SOT-346 Parameter Value SC-59 V 50V CEO I 150mA C SMT3 llFeatures llInner circuit 1)High DC current gain. 2)High emitter-base voltage. (V =12V) CBO 3)Low saturation voltage. (Max.V =300mV at I /I =50/5mA) CE(sat) C B llApplication Low frequency amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SD2226K 2928 T146 180 8 3000 BJ (SMT3) www.rohm.com 1/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2226K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 12 V EBO I 150 mA C Collector current *1 I 200 mA CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 12 - - V EBO E Collector cut-off current I V = 50V - - 300 nA CBO CB I Emitter cut-off current V = 12V - - 300 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 560 - 2700 - FE CE C V = 5V, I = -10mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 5V, I = 0A, CB E C Output capacitance - 3.5 - pF ob f = 1kHz hFE values are calssified as follows : rank U V W - - h 560-1200 820-1800 1200-2700 - - FE *1 Single Pulse Pw=10ms *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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