X-On Electronics has gained recognition as a prominent supplier of 2SD2318TLU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2318TLU Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2318TLU ROHM

2SD2318TLU electronic component of ROHM
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See Product Specifications
Part No.2SD2318TLU
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT D-PAK;BCE NPN SMT HFE RANK U
Datasheet: 2SD2318TLU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0505 ea
Line Total: USD 1.05 
Availability - 2041
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SD2318TLU More Buying Options & Price Grid(s)

Availability Price Quantity
2041
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0505
10 : USD 0.869
100 : USD 0.6336
500 : USD 0.5335
1000 : USD 0.4928
2500 : USD 0.4862
5000 : USD 0.4675
25000 : USD 0.4664

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2318TLU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2318TLU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2318 Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 Features External dimensions (Units : mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5 CE C B (Typ. V (sat) =0.5V at I / I =2A / 0.5A) 0.9 3) Complements the 2SB1639. C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM : CPT3 9.5 Absolute maximum ratings (Ta=25C) (3) Emitter(Source) EIAJ : SC-63 Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V 3 A Collector current IC 4.5 A(Pulse) * 1 W Collector power dissipation PC 15 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C Single pulse Pw=100ms * Packaging specifications and hFE Type 2SD2318 Package CPT3 hFE UV Code TL Basic ordering unit (pieces) 2500 Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 - - V IC=50 A Collector-emitter breakdown voltage BVCEO 60 - V IC=1mA - Emitter-base breakdown voltage BVEBO 6 - - V IE=50 A Collector cutoff current ICBO - - 100 A VCB=80V Emitter cutoff current IEBO - - 100 A VEB=6V Collector-emitter saturation voltage VCE(sat) - - 1.0 V IC/IB=2A/0.05A * Base-emitter saturation voltage VBE(sat) - - 1.5 V IC/IB=2A/0.05A * DC current transfer ratio hFE 560 - 1800 - VCE/IC=4V/0.5A Transition frequency fT - 50 - MHz VCE=5V, IE=-0.2A, f=10MHz Output capacitance Cob - 60 - pF VCB=10V, IE=0A, f=1MHz * Measured using pulse current. * 1.0 ( ) ( ) ( ) 3 2 1 0.5 2.3 2.3 0.9 0.65 0.75 0.5 5.1 2.3 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by ROHM manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE158 NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 FMMTA92QTA 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E IMZ2AT108 UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E NTE103 30A02MH-TL-E NSV40301MZ4T1G NTE101 NTE13 NTE15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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RHM
ROHM Semicon
ROHM Semiconductor

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