X-On Electronics has gained recognition as a prominent supplier of 2SD2351T106W Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2351T106W Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2351T106W ROHM

2SD2351T106W electronic component of ROHM
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See Product Specifications
Part No.2SD2351T106W
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 150 mA 250MHz 200 mW Surface Mount UMT3
Datasheet: 2SD2351T106W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0603 ea
Line Total: USD 0.6 
Availability - 2868
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 10  Multiples: 10
Pack Size: 10

 2SD2351T106W More Buying Options & Price Grid(s)

Availability Price Quantity
2868
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0603
100 : USD 0.0483
300 : USD 0.0424
3000 : USD 0.0378
6000 : USD 0.0342
9000 : USD 0.0325

4952
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2673
100 : USD 0.1375
1000 : USD 0.1265
3000 : USD 0.1034
9000 : USD 0.0935
24000 : USD 0.0891

7413
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 188
Multiples : 1
188 : USD 0.2162
200 : USD 0.2064
500 : USD 0.1625
1000 : USD 0.1449
2000 : USD 0.1395
3000 : USD 0.1385
6000 : USD 0.1378

2716
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 695
Multiples : 1
695 : USD 0.1415
1000 : USD 0.1368
2500 : USD 0.1327

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2351T106W from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2351T106W and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2351 General Purpose Transistor (50V, 150mA) Datasheet llOutline SOT-323 Parameter Value SC-70 V 50V CEO I 150mA C UMT3 llFeatures llInner circuit 1)High DC current gain. 2)High emitter-base voltage. (V =12V) CBO 3)Low saturation voltage. (Max. V =300mV at I / I =50mA/5mA) CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SD2351 2021 T106 180 8 3000 BJ (UMT3) www.rohm.com 1/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2351 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 12 V EBO I 150 mA C Collector current *1 I 200 mA CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 12 - - V EBO E Collector cut-off current I V = 50V - - 300 nA CBO CB I Emitter cut-off current V = 12V - - 300 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 820 - 2700 - FE CE C V = 5V, I = -10mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 5V, I = 0A, CB E C Output capacitance - 3.5 - pF ob f = 1MHz hFE values are calssified as follows : rank V W - - - h 820-1800 1200-2700 - - - FE *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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