X-On Electronics has gained recognition as a prominent supplier of 2SD2318TLV Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2318TLV Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2318TLV ROHM

Name: 2SD2318TLV
Brand: ROHM
SKU: 2SD2318TLV_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	2SD2318TLV
Manufacturer:	ROHM
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Transistor NPN 60 V 3 A 50MHz 15 W Surface Mount CPT3
Datasheet:	2SD2318TLV Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.604 ea
Line Total: USD 1510

Availability - 0

MOQ: 2500 Multiples: 2500
Pack Size: 2500

2SD2318TLV More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.4312 10 : USD 1.2219 100 : USD 0.9525 500 : USD 0.7868 1000 : USD 0.6212

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 2500 Multiples : 2500	2500 : USD 0.604 5000 : USD 0.5508 12500 : USD 0.5301

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.4312 10 : USD 1.2219 100 : USD 0.9525 500 : USD 0.7868 1000 : USD 0.6212

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 2500 Multiples : 2500	2500 : USD 0.5828 5000 : USD 0.5396 7500 : USD 0.5396 10000 : USD 0.5396

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 2500 Multiples : 2500	2500 : USD 0.4862 5000 : USD 0.4675

We are delighted to provide the 2SD2318TLV from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2318TLV and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2318 Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 Features External dimensions (Units : mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5 CE C B (Typ. V (sat) =0.5V at I / I =2A / 0.5A) 0.9 3) Complements the 2SB1639. C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM : CPT3 9.5 Absolute maximum ratings (Ta=25C) (3) Emitter(Source) EIAJ : SC-63 Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V 3 A Collector current IC 4.5 A(Pulse) * 1 W Collector power dissipation PC 15 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C Single pulse Pw=100ms * Packaging specifications and hFE Type 2SD2318 Package CPT3 hFE UV Code TL Basic ordering unit (pieces) 2500 Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 - - V IC=50 A Collector-emitter breakdown voltage BVCEO 60 - V IC=1mA - Emitter-base breakdown voltage BVEBO 6 - - V IE=50 A Collector cutoff current ICBO - - 100 A VCB=80V Emitter cutoff current IEBO - - 100 A VEB=6V Collector-emitter saturation voltage VCE(sat) - - 1.0 V IC/IB=2A/0.05A * Base-emitter saturation voltage VBE(sat) - - 1.5 V IC/IB=2A/0.05A * DC current transfer ratio hFE 560 - 1800 - VCE/IC=4V/0.5A Transition frequency fT - 50 - MHz VCE=5V, IE=-0.2A, f=10MHz Output capacitance Cob - 60 - pF VCB=10V, IE=0A, f=1MHz * Measured using pulse current. * 1.0 ( ) ( ) ( ) 3 2 1 0.5 2.3 2.3 0.9 0.65 0.75 0.5 5.1 2.3 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by ROHM manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE158 NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 FMMTA92QTA 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E IMZ2AT108 UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E NTE103 30A02MH-TL-E NSV40301MZ4T1G NTE101 NTE13 NTE15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case DPAK DPAK
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 3 A 3 A
Collector- Emitter Voltage VCEO Max 60 V 60 V
Collector- Base Voltage VCBO 80 V 80 V
Emitter- Base Voltage VEBO 6 V 6 V
Pd - Power Dissipation 1 W 1 W
Gain Bandwidth Product fT 50 Mhz 50 Mhz
Maximum Operating Temperature + 150 C + 150 C
Series 2Sd2318 2Sd2318
Packaging Reel Reel
Dc Current Gain Hfe Max 18000 18000
Brand Rohm Semiconductor Rohm Semiconductor
Continuous Collector Current 3 A 3 A
Dc Collector/Base Gain Hfe Min 560 560
Maximum Power Dissipation 1 W 1 W
Factory Pack Quantity : 2500 2500
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541290000 8541290000