2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. ( ) 3 (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit 2SD1918 Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V 5.5 1.5 Emitter-base voltage VEBO 5 V 1.5 A(DC) Collector current IC 0.9 3 A(Pulse) 1 2SD1857A 1 W 2 C0.5 Collector 2SD2211 2 power PC W 3 1 dissipation 0.8Min. 2SD1918 1.5 10 W(Tc=25C) 2.5 Junction temperature 150 C Tj 9.5 Storage temperature Tstg C 55 +150 (1) Base(Gate) (2) Collector(Drain) ROHM : CPT3 1 Single pulse Pw=100ms 2 (3) Emitter(Source) 2 Printed circuit board 1.7mm thick, collector plating 1cm or larger. EIAJ : SC-63 3 When mounted on a 40 x 40 x 0.7mm ceramic board. 2SD1857A 6.8 2.5 Packaging specifications and hFE 0.65Max. Type 2SD2211 2SD1918 2SD1857A 0.5 Package MPT3 CPT3 ATV ( ) ( ) hFE QR Q PQ (1) 2 3 Marking DQ* 2.54 2.54 1.05 0.45 Code T100 TL TV2 Taping specifications Basic ordering unit (pieces) 1000 2500 2500 (1) Emitter * Denotes hFE (2) Collector ROHM : ATV (3) Base Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 160 V IC = 50 A Collector-emitter breakdown voltage BVCEO 160 V IC = 1mA BVEBO 5 V IE = 50 A Emitter-base breakdown voltage Collector cutoff current ICBO 1 A VCB = 120V IEBO 1 A VEB = 4V Emitter cutoff current Collector-emitter saturation voltage VCE(sat) 2 V IC/IB = 1A/0.1A VBE(sat) 1.5 V IC/IB = 1A/0.1A Base-emitter saturation voltage 2SD2211,2SD1918 120 390 DC current hFE VCE/IC = 5V/0.1A transfer ratio 2SD1857A 82 270 Transition frequency fT 80 MHz VCE = 5V , IE = 0.1A , f = 30MHz Output capacitance Cob 20 pF VCB = 10V , IE = 0A , f = 1MHz Measured using pulse current. 1.0 (3) (2) (1) 3.0 0.5 1.5 1.5 2.3 2.3 0.4 0.4 0.4 0.9 0.5 0.65 0.75 1.0 0.9 14.5 4.4 0.5 1.6 1.5 5.1 2.3 4.5 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by ROHM manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE158 NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 FMMTA92QTA 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E IMZ2AT108 UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E NTE103 30A02MH-TL-E NSV40301MZ4T1G NTE101 NTE13 NTE15