MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit COLLECTOR 3 Collector Emitter Voltage V 40 Vdc CEO BASE Collector Base Voltage V 40 Vdc CBO 1 Emitter Base Voltage V 12 Vdc EBO Collector Current Continuous I 500 mAdc C EMITTER 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1V M Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina Substrate, P 1 D (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1V = Device Code Thermal Resistance, JunctiontoAmbient R 417 C/W M = Date Code* JA = PbFree Package Junction and Storage Temperature T , T 55 to +150 C J stg (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBT6427LT1G SOT23 3,000 Tape & Reel (PbFree) SMMBT6427LT1G SOT23 3,000 Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 5 MMBT6427LT1/DMMBT6427LT1G, SMMBT6427LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, V = 0) 40 C BE Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 40 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 12 C C Collector Cutoff Current I Adc CES (V = 25 Vdc, I = 0) 1.0 CE B Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 50 CB E Emitter Cutoff Current I nAdc EBO (V = 10 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 5.0 Vdc) 10,000 100,000 C CE (I = 100 mAdc, V = 5.0 Vdc) 20,000 200,000 C CE (I = 500 mAdc, V = 5.0 Vdc) 14,000 140,000 C CE (3) Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 0.5 mAdc) 1.2 C B (I = 500 mAdc, I = 0.5 mAdc) 1.5 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 500 mAdc, I = 0.5 mAdc) 2.0 C B Base Emitter On Voltage V Vdc BE(on) (I = 50 mAdc, V = 5.0 Vdc) 1.75 C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 7.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 15 EB C CurrentGain High Frequency h Vdc fe (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 1.3 C CE Noise Figure NF dB 10 (I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2