MMBTA06W, SMMBTA06W, Driver Transistor NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating: www.onsemi.com Human Body Model 4 kV Machine Model 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SC70 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 419 Compliant* STYLE 3 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 CollectorEmitter Voltage V 80 Vdc CEO CollectorBase Voltage V 80 Vdc 1 CBO BASE EmitterBase Voltage V 4.0 Vdc EBO Collector Current Continuous I 500 mAdc 2 C EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board P mW D T = 25C 460 A GM M Thermal Resistance, Junction to Ambient R C/W JA (Note 1) 272 1 Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the GM = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. = PbFree Package 2 1. FR4 Board, 1 oz. Cu, 100 mm . (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBTA06WT1G SC70 3,000 / (PbFree) Tape & Reel SMMBTA06WT1G SC70 3,000 / (PbFree) Tape & Reel SMMBTA06WT3G SC70 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please *For additional information on our PbFree strategy and soldering details, please refer to our Tape and Reel Packaging Specifications download the ON Semiconductor Soldering and Mounting Techniques Reference Brochure, BRD8011/D. Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2018 Rev. 5 MMBTA06WT1/DMMBTA06W, SMMBTA06W, ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 80 C B EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) 4.0 E C Collector Cutoff Current I Adc CES (V = 60 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I Adc CBO (V = 80 Vdc, I = 0) 0.1 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 0.25 C B BaseEmitter On Voltage V Vdc BE(on) (I = 100 mAdc, V = 1.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) f MHz T (I = 10 mA, V = 2.0 V, f = 100 MHz) 100 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f is defined as the frequency at which h extrapolates to unity. T fe TURN-ON TIME TURN-OFF TIME V V +V -1.0 V CC CC BB +40 V +40 V 5.0 s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 t = 3.0 ns * C 6.0 pF * C 6.0 pF r S S 5.0 F 5.0 F 100 100 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2