MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V Vdc CEO MMBTA05L 60 3 MMBTA06L 80 CollectorBase Voltage V Vdc 1 CBO MMBTA05L 60 2 MMBTA06L 80 SOT23 EmitterBase Voltage V 4.0 Vdc EBO CASE 318 STYLE 6 Collector Current Continuous I 500 mAdc C Electrostatic Discharge ESD HBM Class 3B MM Class C MARKING DIAGRAMS CDM Class IV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1H M 1GM M assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MMBTA05LT1 MMBTA06LT1, SMMBTA06L Total Device Dissipation FR5 P 225 mW D Board (Note 1) T = 25C 1H, 1GM = Specific Device Code A Derate above 25C 1.8 mW/C M = Date Code* = PbFree Package Thermal Resistance, R 556 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient *Date Code orientation and/or overbar may Total Device Dissipation Alumina P 300 mW vary depending upon manufacturing location. D Substrate, (Note 2) T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, R 417 C/W JA See detailed ordering and shipping information in the package JunctiontoAmbient dimensions section on page 5 of this data sheet. Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 10 MMBTA05LT1/DMMBTA05L, MMBTA06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBTA05L 60 C B MMBTA06L 80 EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CES (V = 60 Vdc, I = 0) CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) MMBTA05L 0.1 CB E (V = 80 Vdc, I = 0) MMBTA06L 0.1 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 100 mAdc, V = 1.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f 100 MHz T (I = 10 mA, V = 2.0 V, f = 100 MHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f is defined as the frequency at which h extrapolates to unity. T fe TURN-ON TIME TURN-OFF TIME V V +V -1.0 V CC BB CC +40 V +40 V 5.0 s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 t = 3.0 ns * C 6.0 pF * C 6.0 pF r S S 5.0 F 5.0 F 100 100 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2