X-On Electronics has gained recognition as a prominent supplier of 2N6039 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6039 Darlington Transistors are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6039 Central Semiconductor

2N6039 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N6039
Manufacturer: Central Semiconductor
Category: Darlington Transistors
Description: Transistors Darlington NPN Darlington
Datasheet: 2N6039 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4921 ea
Line Total: USD 1.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4921
10 : USD 1.2582
100 : USD 1.0311
250 : USD 0.9509
500 : USD 0.8886
1000 : USD 0.7727
2000 : USD 0.7649
5000 : USD 0.7594
10000 : USD 0.7416

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2N6039 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6039 and other electronic components in the Darlington Transistors category and beyond.

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2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 TRANSISTORS series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N6034 2N6035 2N6036 C SYMBOL 2N6037 2N6038 2N6039 UNITS Collector-Base Voltage V 40 60 80 V CBO Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 8.0 A CM Continuous Base Current I 100 mA B Power Dissipation P 40 W D Power Dissipation (T=25C) P 1.5 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 83.3 C/W JA Thermal Resistance 3.12 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 500 A CBO CB CBO I V =Rated V , V=1.5V 100 A CEV CE CEO BE I V =Rated V , V =1.5V, T=125C 500 A CEV CE CEO BE C I V =Rated V 100 A CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA (2N6034, 2N6037) 40 V CEO C BV I =100mA (2N6035, 2N6038) 60 V CEO C BV I =100mA (2N6036, 2N6039) 80 V CEO C V I =2.0A, I=8.0mA 2.0 V CE(SAT) C B V I =4.0A, I=40mA 3.0 V CE(SAT) C B V I =4.0A, I=40mA 4.0 V BE(SAT) C B V V =3.0V, I=2.0A 2.8 V BE(ON) CE C h V =3.0V, I=500mA 500 FE CE C h V =3.0V, I=2.0A 750 15K FE CE C h V =3.0V, I=4.0A 100 FE CE C f V =10V, I =750mA, f=1.0MHz 25 MHz T CE C C V =10V, I =0, f=100kHz (PNP) 200 pF ob CB E C V =10V, I =0, f=100kHz (NPN) 100 pF ob CB E R1 (12-March 2014)2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (12-March 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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