X-On Electronics has gained recognition as a prominent supplier of 2SD1509(Q) Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2SD1509(Q) Darlington Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2SD1509(Q) Toshiba

2SD1509(Q) electronic component of Toshiba
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See Product Specifications
Part No.2SD1509(Q)
Manufacturer: Toshiba
Category: Darlington Transistors
Description: Trans Darlington NPN 80V 2A 3-Pin(3+Tab) PW-Mold
Datasheet: 2SD1509(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
224: USD 0.1353 ea
Line Total: USD 30.31 
Availability - 0
MOQ: 224  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 224
Multiples : 1
224 : USD 0.1353
500 : USD 0.1208

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Brand
Deleted
Collector-Base Voltage
Collector-Emitter Saturation Voltage
Package Type
Dc Current Gain
Base-Emitter Saturation Voltage Max
Collector Current Dc
Collector-Emitter Voltage
Emitter-Base Voltage
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1509(Q) from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1509(Q) and other electronic components in the Darlington Transistors category and beyond.

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2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1509 Micro-Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 80 V CBO Collector-emitter voltage V 80 V CEO Emitter-base voltage V 8 V EBO Collector current I 2 A C Base current I 0.5 A B Ta = 25C 1.5 JEDEC Collector power P W C dissipation Tc = 25C 10 JEITA Junction temperature T 150 C j TOSHIBA 2-8H1A Storage temperature range T 55 to 150 C stg Weight: 0.82 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE 4 k 800 EMITTER 1 2009-12-21 2SD1509 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 80 V, I = 0 10 A CBO CB E Emitter cut-off current I V = 8 V, I = 0 4 mA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 80 V (BR) CEO C B DC current gain h V = 2 V, I = 1 A 2000 FE CE C Collector-emitter saturation voltage V I = 1 A, I = 1 mA 1.5 V CE (sat) C B Base-emitter saturation voltage V I = 1 A, I = 1 mA 2.0 V BE (sat) C B Transition frequency f V = 2 V, I = 0.5 A 100 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 pF ob CB E Turn-on time t 0.4 on Output 20 s I B1 Input I B2 Switching time Storage time t 4.0 s stg V = 30 V CC I = 1 mA,I = 1 mA, B1 B2 Fall time t 0.6 f duty cycle 1% Marking Lot No. D1509 Part No. (or abbreviation code) Note2 Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 I B1 I B2 30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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