2SD2142K High-gain Amplifier Transistor (30V, 300mA) Datasheet llOutline Parameter Value SMT3 V 30V CES I 300mA C 2SD2142K SOT-346 llFeatures 1)Darlington connection for a high h . llInner circuit FE (DC current gain=5000(Min.)at V =3V, I =10mA) CE C 2)High input impedance. llApplication High gain amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2142K SMT3 2928 T146 180 8 3000 R1M www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2142K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CES V Emitter-base voltage 10 V EBO I Collector current 300 mA C P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 10A Collector-base breakdown voltage 30 - - V CBO C Collector-emitter breakdown BV I = 100A 30 - - V CES C voltage BV Emitter-base breakdown voltage I = 10A 10 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 10V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 0.1mA - - 1.5 V CE(sat) C B Base-emitter turn *1 V = 5V, I = 100mA - - 2 V V CE C BE(on) on voltage h 1 V = 5V, I = 10mA 5k - - FE CE C DC current gain - *1 V = 5V, I = 100mA 10k - - h 2 CE C FE V = 5V, I = -10mA, CE E *2 Transition frequency f 125 - - MHz T f = 100MHz V = 10V, I = 0A, CB E Output capacitance C - 5.4 - pF ob f = 100kHz *1 Pulse test *2 Characteristics of built-in transistor www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.