2SD2150T100S ROHM

Low Frequency Transistor (20V, 3A) 2SD2150 z Features z Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) +0.2 4.5 IC / IB = 2A / 0.1A 0.1 +0.2 1.5 1.60.1 0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) +0.1 0.4 0.05 0.40.1 0.50.1 z Structure 0.40.1 1.50.1 1.50.1 Epitaxial planar type 3.00.2 NPN silicon transistor (1) Base ROHM : MPT3 (2) Collector z Absolute maximum ratings (Ta=25C) EIAJ : SC-62 (3) Emitter Abbreviated symbol: CF Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Denotes hFE Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V 3 A (DC) Collector current IC 5 A (Pulse) 1 0.5 W Collector power dissipation PC 2 W 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=10ms 2 Mounted on a 40400.7mm Ceramic substrate. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 VIC=50A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=50A Collector cutoff current ICBO 0.1 A VCB=30V Emitter cutoff current IEBO 0.1 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.2 0.5 V IC/IB=2A/0.1A DC current transfer ratio hFE 120 560 VCE=2V, IC=0.1A Transition frequency fT 290 MHz VCE=2V, IE= 0.5A, f=100MHz Output capacitance Cob 25 pF VCE=10V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2009.11 - Rev.B 1/2 c 2009 ROHM Co., Ltd. All rights reserved. 4.00.3 +0.2 2.5 1.00.2 0.1 0.50.1 2SD2150 Data Sheet z Packaging specifications and hFE Package Taping Code T100 Basic ordering 1000 Type hFE unit (pieces) 2SD2150 RS hFE values are classified as follows : Item R S hFE 180 to 390 270 to 560 z Electrical characteristic curves 10 2 5 Ta=25C 50mA Ta=25C VCE=2V 20mA 12mA 35mA 5 45mA 18mA 10mA 30mA 16mA 40mA 8mA 2 14mA 25mA 1.6 4 1 20mA 6mA 0.5 Ta=100C 15mA 25C 1.2 3 0.2 40C 4mA 0.1 10mA 0.05 0.8 2 0.02 2mA 5mA 0.01 0.4 1 5m 2m IB=0A IB=0A 0 0 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 012345 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics ( ) characteristics ( ) 5000 1 2 VCE=2V IC/IB=10 lC/lB=20 0.5 1 Ta=100C 2000 25C Ta=100C 0.5 40C 1000 0.2 25C 40C 500 0.1 0.2 Ta=100C 0.05 200 0.1 25C 40C 50m 100 0.02 50 0.01 20m 5m 10m 20 5m 2m 10 5 2m 1m 1m 2m 5m 0.01 0.02 0.05 0.10.2 0.5 1 2 5 10 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10 1m 2m 5m0.010.02 0.05 25 10 0.10.2 0.5 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 Collector-emitter Fig.6 Collector-emitter collector current saturation voltage vs. saturation voltage vs. collector current ( ) collector curren ( ) 1000 1000 2 Ta=25C Ta=25C IC/IB=50 VCE=2V 500 f=1MHz 1 500 IE=0A IC=0A 200 0.5 100 Cob 200 0.2 Ta=100C 50 0.1 25C 100 40C 20 50m Cob 50 10 20m 5 10m 20 2 5m 1 10 2m 1 2 5 10 20 50100 2005001000 0.1 0.2 0.5 1 2 5 10 20 50 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs. Fig.7 Collector-emitter emitter current collector-base voltage saturation voltage vs. Emitter input capacitance vs. collector current ( ) emitter-base voltage www.rohm.com 2009.11 - Rev.B 2/2 c 2009 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF)