X-On Electronics has gained recognition as a prominent supplier of 2SD2153T100V Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2153T100V Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2153T100V ROHM

2SD2153T100V electronic component of ROHM
2SD2153T100V ROHM
2SD2153T100V Bipolar Transistors - BJT
2SD2153T100V Semiconductors

Images are for reference only
See Product Specifications
Part No. 2SD2153T100V
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 25 V 2 A 110MHz 2 W Surface Mount MPT3
Datasheet: 2SD2153T100V Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
183: USD 0.6917 ea
Line Total: USD 126.58 
Availability - 1333
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 183  Multiples: 1
Pack Size: 1

 2SD2153T100V More Buying Options & Price Grid(s)

Availability Price Quantity
1333
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 183
Multiples : 1
183 : USD 0.6917

1295
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 177
Multiples : 1
177 : USD 0.9971
200 : USD 0.9932
500 : USD 0.7775
1000 : USD 0.7263

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2153T100V from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2153T100V and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2153 Datasheet High gain amplifier transistor (25V / 2A) llOutline SOT-89 Parameter Value SC-62 V 25V CEO I 2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage. typically V =120mV at I /I =1A/20mA CE(sat) C B 2)High DC current gain llApplication LOW FREQUENCY POWER AMP llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SD2153 4540 T100 180 12 1000 DN (MPT3) www.rohm.com 1/6 20160129 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SD2153 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 25 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 3 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 25 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB I Emitter cut-off current V = 5V - - 500 nA EBO EB *4 Collector-emitter saturation voltage V I = 1A, I = 20mA - - 500 mV C B CE(sat) *4 DC current gain V = 6V, I = 0.5A 560 - 2700 - h CE C FE V = 10V, I = -10mA, CE E f Transition frequency - 110 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 22 - pF ob f = 1MHz hFE values are calssified as follows : rank U V W - - h 560-1200 820-1800 1200-2700 - - FE *1 Single Pulse, Pw=10ms *2 Each terminal mounted on a reference land. *3 Mounted on a 40400.7mm ceramic board. *4 Pulsed www.rohm.com 2/6 20160129 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ROHM Semiconductor

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