2SD2083 Sanken

1ms 10ms With Infinite heatsink DC Typ Equivalent C circuit B Darlington 2SD2083 (2k)(100) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) Application : Driver for Solenoid, Motor and General Purpose External Dimensions MT-100(TO3P) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 4.80.2 15.60.4 0.1 VCBO 120 V ICBO VCB=120V 10max m A 9.6 2.0 VCEO 120 V IEBO VEB=6V 10max mA V(BR)CEO IC=25mA VEBO 6 V 120min V a 3.20.1 IC 25(Pulse40) A hFE VCE=4V, IC=12A 2000min b IB VCE(sat) IC=12A, IB=24mA 1.8max V 2 A PC 120(Tc=25C) W VBE(sat) IC=12A, IB=24mA 2.5max V 2 Tj fT VCE=12V, IE=1A 20typ MHz 150 C 3 +0.2 +0.2 COB VCB=10V, f=1MHz Tstg 55 to +150 C 340typ pF 1.05 0.65 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 n Typical Switching Characteristics (Common Emitter) BEC Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. b. Lot No. 24 2 12 10 5 24 24 1.0typ 6.0typ 1.0typ I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 40 3 25 20 30 I C=25A 2 20 12A 10 1 6A 10 0 0 0 0132 465 0.5 1 5 10 50 100 500 0 1 2 2.2 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 3 20000 20000 10000 10000 5000 5000 1 0.5 1000 1000 500 500 100 100 0.1 1 10 100 1000 0.2 0.5 1 5 10 40 0.02 0.5 1 5 10 40 Collector Current I C(A) Collector Current I C(A) Time t(ms) f TIE Characteristics (Typical) Safe Operating Area (Single Pulse) PcTa Derating (VCE=12V) 100 120 100 50 100 10 5 50 50 Without Heatsink 1 Natural Cooling 0.5 Without Heatsink 3.5 0 0.2 0 0.1 0.5 1 5 10 3 5 10 50 100 200 0 25 50 75 100 125 150 Emitter Current I E(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) 147 Typ IB=1.5mA 3mA 8mA 5mA 12mA 125C 30C 20mA 25C 30mA 125C (Case Temp) 30C (Case Temp) 25C (Case Temp) DC Current Gain hFE Collector Current I C(A) Cut-off Frequency f T(MH Z) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 20.0min 19.9 4.0max 4.0 2.0 1.8 0.2 5.0