This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1221 Silicon PNP epitaxial planar type For general amplification Unit: mm 5.00.2 4.00.2 Features Low collector-emitter saturation voltage V CE(sat) Allowing supply with the radial taping 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 250 V CBO +0.15 Collector-emitter voltage (Base open) V 200 V +0.2 0.45 CEO 0.1 0.45 0.1 Emitter-base voltage (Collector open) V 5V (1.27) (1.27) EBO Collector current I 70 mA C 1: Emitter 132 Peak collector current I 100 mA 2: Collector CP 2.540.15 3: Base Collector power dissipation P 1W C TO-92NL-A1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 200 V CEO C B Emitter-base voltage (Collector open) V I = 1 A, I = 0 5V EBO E C * Forward current transfer ratio h V = 10 V, I = 5 mA 30 220 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 1.5 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 50 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 5 10 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 30 to 100 60 to 150 100 to 220 FE Publication date: March 2003 SJC00074BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1221 P T I V I I C a C CE C B 1.2 120 120 T = 25C a VCE = 10 V T = 25C a I = 2 mA B 1.0 100 100 1.8 mA 1.6 mA 1.4 mA 0.8 80 80 1.2 mA 1.0 mA 0.8 mA 0.6 60 60 0.6 mA 0.4 40 40 0.4 mA 0.2 20 20 0.2 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature T (C) Collector-emitter voltage V (V) Base current I (mA) a CE B I V I V V I B BE C BE CE(sat) C 2.4 120 100 I / I = 10 V = 10 V C B CE V = 10 V CE T = 25C a 25C 2.0 100 T = 75C a 25C 10 1.6 80 1.2 60 1 25C T = 75C a 0.8 40 0.1 25C 0.4 20 0 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 Base-emitter voltage V (V) Base-emitter voltage V (V) Collector current I (mA) BE BE C h I f I C V FE C T E ob CB 160 16 300 V = 10 V V = 10 V CB CE I = 0 E T = 25C a f = 1 MHz 250 T = 25C a 120 12 200 T = 75C a 150 8 80 25C 100 25C 40 4 50 0 0 0 0.1 1 10 100 0.1 1 10 100 1 10 100 Collector current I (mA) ( ) ( ) Emitter current I mA Collector-base voltage V V C E CB 2 SJC00074BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.