X-On Electronics has gained recognition as a prominent supplier of 2SB1320A0A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1320A0A Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1320A0A Panasonic

2SB1320A0A electronic component of Panasonic
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Part No.2SB1320A0A
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 50V 0.1A MT-1
Datasheet: 2SB1320A0A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0609 ea
Line Total: USD 121.8 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.0609

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2826
10 : USD 0.1843
100 : USD 0.1321
500 : USD 0.1108

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1320A0A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1320A0A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SD1991A (0.7) (4.0) (0.8) Features 0.65 max. High forward current transfer ratio h FE Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 0.45 0.45 0.05 0.05 Collector-base voltage (Emitter open) V 60 V CBO 1.050.05 Collector-emitter voltage (Base open) V 50 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter 2: Collector Collector current I 100 mA C 123 3: Base Peak collector current I 200 mA CP MT-1-A1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 1 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 1V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S No-rank h 160 to 260 210 to 340 290 to 460 160 to 460 FE Product of no-rank is not classified and have no marking symbol for rank. Publication date: March 2003 SJC00078BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1320A P T I V I I C a C CE C B 500 120 60 T = 25C a V = 5 V CE T = 25C a 100 50 400 80 40 300 I = 300 A B 60 30 250 A 200 A 200 40 20 150 A 100 A 100 20 10 50 A 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 100 200 300 400 Ambient temperature T (C) Collector-emitter voltage V (V) Base current I (A) a CE B I V I V V I B BE C BE CE(sat) C 400 240 10 I / I = 10 C B V = 5 V CE V = 5 V CE T = 25C a 350 200 300 1 160 25C 250 T = 75C a 25C T = 75C 25C a 200 120 0.1 25C 150 80 100 0.01 40 50 0 0 0.001 0 0.4 0.8 1.2 1.6 2.0 1 10 100 1 000 0 0.4 0.8 1.2 1.6 Base-emitter voltage V (V) Base-emitter voltage V (V) Collector current I (mA) C BE BE h I f I C V FE C T E ob CB 600 8 160 V = 5 V V = 10 V CE CB I = 0 E T = 25C a f = 1 MHz 140 500 T = 25C a 120 6 400 T = 75C 100 a 300 25C 80 4 25C 60 200 40 2 100 20 0 0 0 1 10 100 1 000 0.1 1 10 100 1 10 100 ( ) ( ) Collector current I mA Emitter current I (mA) Collector-base voltage V V C E CB 2 SJC00078BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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