This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification 10.00.2 4.20.2 5.50.2 2.70.2 Features 3.10.1 Optimum for 35 W Hi-Fi output High forward current transfer ratio h FE Low collector-emitter saturation voltage V CE(sat) Full-pack package which can be installed to the heat sink with one screw. 1.30.2 1.40.1 +0.2 0.5 0.1 Absolute Maximum Ratings T = 25C 0.80.1 C Parameter Symbol Rating Unit 2.540.3 Collector-base voltage (Emitter open) V 120 V CBO 5.080.5 1: Base Collector-emitter voltage (Base open) V 100 V CEO 2: Collector Emitter-base voltage (Collector open) V 5V 132 3: Emitter EBO EIAJ: SC-67 Collector current I 5A C TO-220F-A1 Package Peak collector current I 8A CP Internal Connection P 45 W Collector power C C dissipation T = 25C2 a B Junction temperature T 150 C j Storage temperature T 55 to +150 C stg E Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 30 mA, I = 0 100 V CEO C B Collector-base cutoff current (Emitter open) I V = 120 V, I = 0 100 A CBO CB E Collector-emitter cutoff current (Base open) I V = 100 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 100 A EBO EB C Forward current transfer ratio h V = 5 V, I = 1 A 2 000 FE1 CE C * h V = 5 V, I = 4 A 5 000 30 000 FE2 CE C Collector-emitter saturation voltage V I = 4 A, I = 4 mA 2.5 V CE(sat) C B Base-emitter saturation voltage V I = 4 A, I = 4 mA 3.0 V BE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = 4 A, I = 4 mA, I = 4 mA 1.0 s on C B1 B2 Storage time t V = 50 V 0.8 s stg CC Fall time t 1.0 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q P h 5 000 to 15 000 8 000 to 30 000 FE2 Publication date: February 2003 SJD00062BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1252 P T I V V I C a C CE CE(sat) C 60 6 100 I /I =1000 C B TC=25C (1)T =Ta C (2)With a 1001002mm Al heat sink 50 5 (3)With a 50502mm IB=0.5mA Al heat sink (4)Without heat sink (1) 40 4 0.4mA 10 (PC=2W) 0.3mA 30 3 TC=100C 0.2mA 20 2 1 25C (2) (4) 0.1mA 25C 10 1 (3) 0 0 0.1 0 40 80 120 160 0 2 4 6 8 10 12 0.1 1 10 100 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C V I h I C V BE(sat) C FE C ob CB 5 100 10 1 000 I /I =1000 VCE=5V C B I =0 E f=1MHz 25C T =100C TC=25C C 4 10 25C 10 100 3 10 TC=25C 1 10 100C 2 25C 10 0.1 10 1 0.1 1 10 100 0.01 0.1 1 10 1 10 100 Collector current I (A) Collector current I (A) Collector-base voltage V (V) C C CB t , t , t I Safe operation area on stg f C 100 100 Non repetitive pulse Pulsed tw=1ms TC=25C Duty cycle=1% I /I =1000 C B (IB1=IB2) V =50V CC 10 ICP 10 TC=25C t=1ms IC t on t=10ms tf 1 1 DC t stg 0.1 0.1 0.01 0.01 0 2 4 6 8 1 10 100 1 000 Collector current I (A) Collector-emitter voltage V (V) C CE 2 SJD00062BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.