This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821G Features Package High collector-emitter voltage (Base open) V Code CEO Low noise voltage NV SMini3-F2 S-Mini type package, allowing downsizing of the equipment and Marking Symbol: I automatic insertion through the tape packing and the magazine Pin Name packing. 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 150 V CBO Collector-emitter voltage (Base open) V 150 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 A CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 450 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common base, input open circuited) Noixe voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 130 to 220 185 to 330 260 to 450 FE Publication date: April 2007 SJC00354AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC).This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1220G P T I V I V C a C CE C BE 200 100 120 V = 5 V T = 25C CE a I = 10 mA B 25C 9 mA 100 160 80 8 mA T = 75C 25C a 7 mA 6 mA 5 mA 80 120 60 4 mA 60 3 mA 80 40 2 mA 40 40 20 1 mA 20 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 250 100 600 V = 10 V I / I = 10 CB C B V = 5 V CE T = 25C a 500 200 10 400 T = 75C a 150 1 300 25C T = 75C a 100 25C 25C 200 25C 0.1 50 100 0 0.01 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Emitter current I (mA) Collector current I (mA) Collector current I (mA) E C C C V ob CB 10 I = 0 E f = 1 MHz T = 25C a 8 6 4 2 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00354AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.