This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SD1821 +0.10 +0.1 0.3 0.15 0.05 0.0 3 Features High collector-emitter voltage (Base open) V CEO Low noise voltage NV 1 2 S-Mini type package, allowing downsizing of the equipment and (0.65) (0.65) automatic insertion through the tape packing and the magazine 1.30.1 packing. 2.00.2 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 150 V CBO 2: Emitter Collector-emitter voltage (Base open) V 150 V CEO 3: Collector EIAJ: SC-70 Emitter-base voltage (Collector open) V 5V EBO SMini3-G1 Package Collector current I 50 mA C Marking Symbol: I Peak collector current I 100 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 A CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 450 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common base, input open circuited) Noixe voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 130 to 220 185 to 330 260 to 450 FE Publication date: March 2003 SJC00073BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1220 P T I V I V C a C CE C BE 200 100 120 V = 5 V T = 25C CE a I = 10 mA B 25C 9 mA 100 160 80 8 mA T = 75C 25C a 7 mA 6 mA 5 mA 80 120 60 4 mA 60 3 mA 80 40 2 mA 40 40 20 1 mA 20 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 250 100 600 V = 10 V I / I = 10 CB C B V = 5 V CE T = 25C a 500 200 10 400 T = 75C a 150 1 300 25C T = 75C a 100 25C 25C 200 25C 0.1 50 100 0 0.01 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Emitter current I (mA) Collector current I (mA) Collector current I (mA) E C C C V ob CB 10 I = 0 E f = 1 MHz T = 25C a 8 6 4 2 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00073BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.