This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1219 Silicon PNP epitaxial planar type For general amplication Complementary to 2SD1820 Package Features Large collector current I Code C S-Mini type package, allowing downsizing of the equipment and automatic SMini3-G1 insertion through the tape packing. Pin Name 1. Base Absolute Maximum Ratings T = 25C 2. Emitter a 3. Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO Marking Symbol: C Collector-emitter voltage (Base open) V 25 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 500 mA C Peak collector current I 1 A CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E 2 * h V = 10 V, I = 150 mA 85 340 FE1 CE C 1 * Forward current transfer ratio h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.35 0.60 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 300 mA, I = 30 mA 1.1 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 6 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 2: Rank classication * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Marking symbol CQ CR CS C Product of no-rank is not classied and have no marking symbol for rank. Publication date : October 2008 SJC00072DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1219 P T I V I I C a C CE C B 240 800 800 T = 25C a V = 10 V CE T = 25C a 700 700 200 I = 10 mA B 9 mA 8 mA 600 600 7 mA 6 mA 160 5 mA 500 500 4 mA 400 400 120 3 mA 300 300 2 mA 80 200 1 mA 200 40 100 100 0 0 0 0 4 8 12 16 20 0 2 4 6 8 10 0 40 80 120 160 Collector-emitter voltage V (V) ( ) ( ) Base current I mA Ambient temperature T C CE B a V I V I h I CE(sat) C BE(sat) C FE C 100 100 600 I / I = 10 I / I = 10 C B C B V = 10 V CE 500 10 10 400 25C T = 25C a T = 75C 1 a 1 300 75C T = 75C 25C a 25C 200 25C 25C 0.1 0.1 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 ( ) ( ) Collector current I (A) Collector current I A Collector current I A C C C f I C V V R T E ob CB CER BE 24 120 240 I = 0 E V = 10 V I = 2 mA CB C f = 1 MHz T = 25C T = 25C a a T = 25C a 20 200 100 160 16 80 12 60 120 8 80 40 4 20 40 0 0 0 1 10 100 1 10 100 1000 1 10 100 ( ) ( ) ( ) Collector-base voltage V V Base-emitter resistance R k Emitter current I mA CB BE E 2 SJC00072DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.