X-On Electronics has gained recognition as a prominent supplier of 2SB1218GRL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1218GRL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1218GRL Panasonic

2SB1218GRL electronic component of Panasonic
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Part No.2SB1218GRL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 45V 0.1A SMINI 3P
Datasheet: 2SB1218GRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1229
10 : USD 0.0675
100 : USD 0.0573
500 : USD 0.0521
N/A

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SB1218GRL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1218GRL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1218G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819G Features Package High forward current transfer ratio h Code FE S-Mini type package, allowing downsizing of the equipment and SMini3-F2 automatic insertion through the tape packing and the magazine Marking Symbol: B packing. Pin Name 1. Base 2. Emitter Absolute Maximum Ratings T = 25C a 3. Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 45 V CBO Collector-emitter voltage (Base open) V 45 V CEO Emitter-base voltage (Collector open) V 7V EBO Collector current I 100 mA C Peak collector current I 200 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 45 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 45 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.3 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2.7 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S No-rank h 160 to 260 210 to 340 290 to 460 160 to 460 FE Marking symbol BQ BR BS B Product of no-rank is not classified and have no marking symbol for rank. Publication date: April 2007 SJC00352AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1218G P T I V I I C a C CE C B 200 120 60 T = 25C a V = 5 V CE T = 25C a 100 50 160 80 40 120 I = 300 A B 60 30 250 A 80 200 A 40 20 150 A 100 A 40 20 10 50 A 0 0 0 0 150 300 450 0 40 80 120 160 0 2 4 6 8 10 12 Collector-emitter voltage V (V) Base current I (A) Ambient temperature T (C) CE B a I V I V V I B BE C BE CE(sat) C 240 400 10 I / I = 10 C B V = 5 V V = 5 V CE CE T = 25C a 350 25C 200 T = 75C 25C a 300 1 160 250 T = 75C a 25C 120 200 0.1 25C 150 80 100 0.01 40 50 0 0 0.001 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 1 10 100 1 000 Base-emitter voltage V (V) Base-emitter voltage V (V) Collector current I (mA) BE BE C h I f I C V FE C T E ob CB 160 8 600 V = 10 V V = 10 V CB I = 0 CE E T = 25C a f = 1 MHz 140 7 T = 25C a 500 120 6 400 100 5 T = 75C a 80 4 300 25C 25C 60 3 200 40 2 100 20 1 0 0 0 0.1 1 10 100 1 10 100 1 10 100 1 000 ( ) Emitter current I (mA) Collector-base voltage V (V) Collector current I mA E CB C 2 SJC00352AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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