This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm For power amplification and switching 10.00.2 4.20.2 5.50.2 2.70.2 Complementary to 2SD1275 and 2SD1275A Features 3.10.1 High forward current transfer ratio h FE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.30.2 1.40.1 Absolute Maximum Ratings T = 25C a +0.2 0.5 0.1 Parameter Symbol Rating Unit 0.80.1 2SB0949 V 60 V Collector-base voltage CBO 2.540.3 (Emitter open) 2SB0949A 80 5.080.5 2SB0949 V 60 V Collector-emitter voltage 1: Base CEO 2: Collector (Base open) 2SB0949A 80 132 3: Emitter Emitter-base voltage (Collector open) V 5V EIAJ: SC-67 EBO TO-220F-A1 Package Collector current I 2A C Peak collector current I 4A Internal Connection CP Collector power T = 25CP 35 W C C C dissipation 2 B Junction temperature T 150 C j Storage temperature T 55 to +150 C stg E Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit 2SB0949 V I = 30 mA, I = 0 60 V Collector-emitter voltage CEO C B (Base open) 2SB0949A 80 Base-emitter voltage V V = 4 V, I = 2 A 2.8 V BE CE C 2SB0949 I V = 60 V, I = 0 1mA Collector-base cutoff CBO CB E current (Emitter open) 2SB0949A V = 80 V, I = 0 1 CB E 2SB0949 I V = 30 V, I = 0 2mA Collector-emitter cutoff CEO CE B current (Base open) 2SB0949A V = 40 V, I = 0 2 CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 2mA EBO EB C Forward current transfer ratio h V = 4 V, I = 1 A 1 000 FE1 CE C * h V = 4 V, I = 2 A 1 000 10 000 FE2 CE C Collector-emitter saturation voltage V I = 2 A, I = 8 mA 2.5 V CE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = 2 A, I = 8 mA, I = 8 mA 0.4 s on C B1 B2 Storage time t V = 50 V 1.5 s stg CC Fall time t 0.5 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R Q P h 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 FE2 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00028BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0949, 2SB0949A P T I V I V C a C CE C BE 50 5 10 (1)TC=Ta T =25C C VCE=4V (2)With a 1001002mm Al heat sink (3)With a 50502mm IB=2.0mA 40 4 8 Al heat sink 1.8mA 1.6mA (4)Without heat sink 1.4mA (P =2W) C 1.2mA 1.0mA 30 3 6 0.8mA 25C 0.6mA (1) T =100C 25C C 20 2 4.0mA 4 0.2mA 10 1 2 (2) (3) 0.1mA (4) 0 0 0 0 40 80 120 160 0 1 2 3 4 5 0 0.8 1.6 2.4 3.2 Ambient temperature T (C) Collector-emitter voltage V (V) a Base-emitter voltage V (V) CE BE V I h I C V CE(sat) C FE C ob CB 5 4 100 10 10 IC/IB=250 V =4V CE IE=0 f=1MHz T =25C C TC=100C 25C 4 3 10 10 10 25C T =100C C 3 2 1 10 10 25C 25C 2 0.1 10 10 0.01 10 1 0.01 0.1 1 10 0.01 0.1 1 10 0.1 1 10 100 Collector current I (A) Collector current I (A) Collector-base voltage V (V) C C CB Safe operation area R t th 3 100 10 Non repetitive pulse (1)Without heat sink T =25C C (2)With a 1001002mm Al heat sink 2 10 (1) 10 I CP (2) t=1ms 10 IC t=10ms 1 DC 11 0.1 1 10 2 0.01 10 4 3 2 1 2 3 4 1 000 1 10 100 10 10 10 10 1 10 10 10 10 Collector-emitter voltage V (V) Time t (s) CE 2 SJD00028BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.