DA2J10800L Panasonic

Doc No. TT4-EA-12595 Revision. 3 Product Standards Switching Diode DA2J10800L DA2J10800L Silicon epitaxial planar type Unit: mm 1.25 0.13 For small current recitification 0.35 2 Features High reverse voltage VR Small reverse current IR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: A2 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F5-B JEITA SC-90A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 300 V Internal Connection Maximum peak reverse voltage VRM 300 V 2 Output current IO(AV) 200 mA Repetitive peak forwand current IFRM 600 mA *1 IFSM 1 A Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 Note) *1: t = 1 s Page 1 of 4 Established : 2010-05-25 Revised : 2013-05-29 1.7 2.5Doc No. TT4-EA-12595 Revision. 3 Product Standards Switching Diode DA2J10800L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 1.2 V Reverse current IR1 VR = 200 V 200 nA Reverse current IR2 VR = 300 V 1 A Terminal capacitance Ct VR = 0 V, f = 1 MHz 3.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 3 MHz. Page 2of 4 Established : 2010-05-25 Revised : 2013-05-29