DA2S00100L Panasonic

Doc No. TT4-EA-13073 Revision. 3 Product Standards Band Switching Diode DA2S00100L DA2S00100L Silicon epitaxial planar type Unit: mm 0.8 0.13 For band switching 2 Features Low forward dynamic resistance rf Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: D1 0.3 0.6 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SSMini2-F5-B JEITA SC-79 Code SOD-523 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 40 V Internal Connection Forward current IF 100 mA 2 Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 Page 1of 4 Established : 2011-02-04 Revised : 2013-05-31 1.2 1.6Doc No. TT4-EA-13073 Revision. 3 Product Standards Band Switching Diode DA2S00100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.92 1.0 V Reverse current IR VR = 40 V 100 nA Diode capacilance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF *1 rf IF = 2 mA, f = 100 MHz 0.65 0.85 Forward dynamic resistance Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. *1 Measure YHP MODL 4191A RF IMPEDANCE ANALYZER Standard frequency of input and output is 100MHz. Page 2of 4 Established : 2011-02-04 Revised : 2013-05-31