DA3J103E0L Panasonic

Doc No. TT4-EA-12362 Revision. 4 Product Standards Switching Diode DA3J103E0L DA3J103E0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.0 DA3X103E in SMini3 type package 0.3 0.13 3 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.9 Marking Symbol: 24 (0.65)(0.65) 1.3 Basic Part Number : 2 elements cathode-common type 1. Anode1 Packaging 2. Anode2 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 3. Cathode1,2 Panasonic SMini3-F2-B JEITA SC-85 Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 3 Single 100 Forward current IF mA Double 150 Single 225 Peak forward current IFM mA Double 340 Non-repetitive peak Single 500 IFSM mA *1 Double 750 12 forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note) *1 t = 1 s Page 1 of 4 Established : 2010-02-12 Revised : 2013-06-28 1.25 2.1Doc No. TT4-EA-12362 Revision. 4 Product Standards Switching Diode DA3J103E0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse voltage VR 80 V IR = 100 A Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 15 pF IF = 10 mA, VR = 6V *1 trr 2 10 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2010-02-12 Revised : 2013-06-28