DA3S102D0L Panasonic

Doc No. TT4-EA-12396 Revision. 3 Product Standards Switching Diode DA3S102D0L DA3S102D0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 DA3J102D in SSMini3 type package 0.26 0.13 3 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.7 Marking Symbol: 23 (0.5)(0.5) 1.0 Basic Part Number : 2 elements anode-common type 1. Cathode1 Packaging 2. Cathode2 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 3. Anode1,2 Panasonic SSMini3-F3-B JEITA SC-89 Code SOT-490 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 3 Single 100 mA Forward current IF Double 150 mA Single 225 mA Peak forward current IFM Double 340 mA Non-repetitive peak Single 500 mA IFSM *1 12 Double 750 mA forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note) *1: t = 1 s Page 1 of 4 Established : 2010-02-24 Revised : 2013-06-12 0.85 1.6Doc No. TT4-EA-12396 Revision. 3 Product Standards Switching Diode DA3S102D0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse voltage VR IR = 100 A 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF IF = 10 mA, VR = 6 V *1 trr 10 ns Reverse recovery time Irr = 0.25 IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2010-02-24 Revised : 2013-06-12