X-On Electronics has gained recognition as a prominent supplier of PJA3415_R1_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJA3415_R1_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJA3415_R1_00001 Panjit

PJA3415_R1_00001 electronic component of Panjit
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Part No.PJA3415_R1_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET P Trench 20V 4A 1.2V @ 250uA 95 mΩ @ 2.1A,1.8V SOT-23 RoHS
Datasheet: PJA3415_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2134 ea
Line Total: USD 0.21 
Availability - 35057
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35057
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2134
10 : USD 0.1474
100 : USD 0.0781
1000 : USD 0.0704
3000 : USD 0.0561
9000 : USD 0.0495
24000 : USD 0.0462

   
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We are delighted to provide the PJA3415_R1_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJA3415_R1_00001 and other electronic components in the MOSFETs category and beyond.

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PPJA3415 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm) Voltage -20 V Current -4.0A Features RDS(ON) , VGS -4.5V, ID -4.0A<57m RDS(ON) , VGS -2.5V, ID -2.8A<70m RDS(ON) , VGS -1.8V, ID -2.1A<95m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A15 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I -4.0 A D Pulsed Drain Current I -16 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W February 17,2014-REV.00 Page 1 PPJA3415 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -20 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -0.4 -0.62 -1.2 V GS(th) DS GS D V =-4.5V, I =-4.0A - 50 57 GS D Drain-Source On-State Resistance R V =-2.5V, I =-2.8A - 59 70 m DS(on) GS D V =-1.8V, I =-2.1A - 74 95 GS D Zero Gate Voltage Drain Current I V =-20V, V =0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V =0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 18 - g V =-10V, I =-4.0A, DS D Gate-Source Charge Q - 2 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 7 - gd Input Capacitance Ciss - 756 - V =-10V, V =0V, DS GS Output Capacitance Coss - 75 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 58 - Switching Turn-On Delay Time td - 5 - (on) V =-10V, I =-4.0A, DD D Turn-On Rise Time tr - 61 - V =-4.5V, ns GS Turn-Off Delay Time td - 70 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 137 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.5 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V =0V - 0.76 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited February 17,2014-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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