PPJC7407 20V P-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm) Voltage -20 V Current -1.3A Features RDS(ON) , VGS -4.5V, ID -1.3A<125m RDS(ON) , VGS -2.5V, ID -1.0A<150m RDS(ON) , VGS -1.8V, ID -0.5A<200m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case : SOT-323 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.005 grams Marking : C07 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I -1.3 A D (Note 4) Pulsed Drain Current I -5.2 A DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJC7407 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I=-250uA -20 - - V DSS GS D Gate Threshold Voltage V V =V , I=-250uA -0.4 -0.69 -1.2 V GS(th) DS GS D V =-4.5V, I=-1.3A - 101 125 GS D Drain-Source On-State Resistance R V =-2.5V, I=-1.0A - 120 150 m DS(on) GS D V =-1.8V, I=-0.5A - 139 200 GS D Zero Gate Voltage Drain Current I V =-20V, V=0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V=0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 5.4 - g V =-10V, I =-1.3A, DS D Gate-Source Charge Q - 0.7 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 1.4 - gd Input Capacitance Ciss - 416 - V =-10V, V =0V, DS GS Output Capacitance Coss - 43 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 32 - Switching Turn-On Delay Time td - 3.9 - (on) V =-10V, I =-1.3A, DD D Turn-On Rise Time tr 27 - V =-4.5V, ns GS Turn-Off Delay Time td 78 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 45 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -0.5 A S Diode Forward Current Diode Forward Voltage V I =-1A, V=0V -0.8 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. March 10,2014-REV.00 Page 2