X-On Electronics has gained recognition as a prominent supplier of PJC138K_R1_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJC138K_R1_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJC138K_R1_00001 Panjit

PJC138K_R1_00001 electronic component of Panjit
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Part No.PJC138K_R1_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET N Trench 50V 360mA 1.5V @ 250uA 1.6 Ω @ 500mA,10V SOT-323 RoHS
Datasheet: PJC138K_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.121 ea
Line Total: USD 0.12 
Availability - 131617
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
131617
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.121
10 : USD 0.0825
100 : USD 0.0429
1000 : USD 0.0385
3000 : USD 0.0297
9000 : USD 0.0264
24000 : USD 0.0242
45000 : USD 0.0242
99000 : USD 0.0242

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the PJC138K_R1_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJC138K_R1_00001 and other electronic components in the MOSFETs category and beyond.

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PPJC138K 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit : inch(mm) Voltage 50 V Current 360mA Features RDS(ON) , VGS 10V, ID 500mA<1.6 RDS(ON) , VGS 4.5V, ID 200mA<2.5 RDS(ON) , VGS 2.5V, ID 100mA<4.5 Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00018 ounces, 0.005 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 360 mA D Pulsed Drain Current I 1200 mA DM o T =25 C 236 mW A Power Dissipation P D o o Derate above 25 C 1.89 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 530 JA - Junction to Ambient C/W November 13,2014-REV.01 Page 1 PPJC138K o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 50 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.8 1.0 1.5 V GS(th) DS GS D V =10V,I =500mA - 0.96 1.6 GS D Drain-Source On-State Resistance R V =4.5V,I =200mA - 1.25 2.5 DS(on) GS D V =2.5V,I =100mA - 2.73 4.5 GS D Zero Gate Voltage Drain Current I V =50V,V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - +3.0 +10 uA GSS GS DS Dynamic Total Gate Charge Q - 0.63 1 g V =25V, I =250mA, DS D Gate-Source Charge Q - 0.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.23 - gd Input Capacitance Ciss - 25 50 V =25V, V =0V, DS GS Output Capacitance Coss - 9.5 20 pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.1 5 Switching Turn-On Delay Time td - 2.2 5 (on) V =25V, I =500mA, DD D Turn-On Rise Time tr 19.2 38 V =10V, ns GS Turn-Off Delay Time td 6.2 12 (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 23 50 Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V 0.86 1.5 V SD S GS NOTES: 1. Pulse width<300s, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper November 13,2014-REV.01 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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