PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode DFN2020-8L -20 V -1.5A Voltage Current Features RDS(ON) , VGS -4.5V, ID -1.5A<325m RDS(ON) , VGS -2.5V, ID -1.2A<420m RDS(ON) , VGS -2.5V, ID -0.5A<600m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case : DFN2020-8L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.00032 ounces, 0.0093 grams Marking : 888 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 V DS Gate-Source Voltage V +8 V GS Continuous Drain Current I -1.5 A D (Note 4) Pulsed Drain Current I -6.0 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W November 16,2015-REV.03 Page 1 PPJQ2888 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -20 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -0.4 -0.64 -1.0 V GS(th) DS GS D V =-4.5V, I =-1.5A - 240 325 GS D Drain-Source On-State Resistance R V =-2.5V, I =-1.2A - 295 420 m DS(on) GS D V =-1.8V, I =-0.5A - 405 600 GS D Zero Gate Voltage Drain Current I V =-20V, V =0V - -0.02 -1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - +3.5 +10 uA GSS GS DS Dynamic Total Gate Charge Q - 2.2 - g V =-10V, I =-1.5A, DS D Gate-Source Charge Q - 0.4 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 0.5 - gd Input Capacitance Ciss - 150 - V =-10V, V =0V, DS GS Output Capacitance Coss - 27 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 9 - Switching Turn-On Delay Time td - 11 - (on) V =-10V, I =-1.5A, DD D Turn-On Rise Time tr - 38 - V =-4.5V, ns GS Turn-Off Delay Time td - 130 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 75 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.0 A S Diode Forward Current Diode Forward Voltage V I =-1A, V =0V - -0.93 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. November 16,2015-REV.03 Page 2