Product Information

PDN2312S

PDN2312S electronic component of Potens

Datasheet
MOSFET N Trench 20V 6.7A 800mV @ 250uA 24 mΩ @ 3A,2.5V SOT-23-3S RoHS
Manufacturer: Potens
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1035 ea
Line Total: USD 0.52

1804 - Global Stock
Ships to you between
Wed. 05 Jun to Mon. 10 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1440 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 5
Multiples : 5

Stock Image

PDN2312S
Potens

5 : USD 0.0972
50 : USD 0.0795
150 : USD 0.0706
500 : USD 0.064
3000 : USD 0.0513
6000 : USD 0.0488

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The PDN2312S with MOSFET N Trench is an electronic part manufactured by Potens which features 20V of nominal voltage, 6.7A of maximum current, 800mV of VGS (threshold voltage) at 250uA, 24 mO of maximum on resistance at 3A, 2.5V of VGS (gate-source voltage) and is packaged in SOT-23-3S RoHS with leads for mounting. The MOSFET provides a low on-state resistance to reduce power loss and improved current handling performance with the help of high temperature operation. This part is suitable for motor drives, switching and other power applications wherein small size, high performance and low power dissipation are necessary.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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