Product Information

PDN3912S

PDN3912S electronic component of Potens

Datasheet
MOSFET N Trench 30V 6.5A 2.5V @ 250uA 34 mΩ @ 4A,4.5V SOT-23-3S RoHS

Manufacturer: Potens
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0972 ea
Line Total: USD 0.97

1241 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1241 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 10
Multiples : 10

Stock Image

PDN3912S
Potens

10 : USD 0.0883
100 : USD 0.0722
300 : USD 0.0642
3000 : USD 0.0515
6000 : USD 0.0467
9000 : USD 0.0443

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The PDN3912S is a MOSFET N Trench 30V 6.5A 2.5V @ 250uA 34 mΩ @ 4A,4.5V SOT-23-3S RoHS manufactured by Potens. It is an N-channel insulated gate field effect transistor (IGFET) designed to provide high switching performance and fast switching features. It has a maximum drain-source voltage of 30V, a maximum drain current of 6.5A, and a maximum gate-source voltage of +/-2.5V. It also features an on-resistance of 34mO at 4A and 4.5V, and is RoHS-compliant. The product is packaged in a SOT-23-3S small outline transistor package, which is small and lightweight, making it ideal for applications where size and weight are concerns.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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