CM100DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts A F F E E G2 E2 G B N J H C2E1 E2 C1 E1 G G1 K K K M NUTS Description: L D (3 PLACES) (2 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK P P P U WIDTH applications. Each module Q Q consists of two IGBT Transistors S in a half-bridge configuration with C each transistor having a reverse- V LABEL R connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, G2 offering simplified system assem - E2 bly and thermal management. C2E1 E2 C1 Features: Low Drive Power Low V CE(sat) E1 Discrete Super-Fast Recovery G1 Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters L 0.26 Dia. Dia. 6.5 A 3.70 94.0 Ordering Information: M M5 Metric M5 B 1.89 48.0 Example: Select the complete N 0.79 20.0 C 1.14+0.004/-0.02 29.0+0.1/-0.5 part module number you P 0.63 16.0 D 3.150.01 80.00.25 desire from the table below -i.e. Q 0.28 7.0 CM100DY-24A is a 1200V (V ), E 0.67 17.0 CES 100 Ampere Dual IGBTMOD R 0.83 21.2 F 0.91 23.0 Power Module. S 0.30 7.5 G 0.16 4.0 Type Current Rating V CES T 0.02 0.5 H 0.71 18.0 Amperes Volts (x 50) U 0.110 2.8 J 0.51 13.0 CM 100 24 V 0.16 4.0 K 0.47 12.0 Rev. 10/07 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100DY-24A Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM100DY-24A Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current (DC, T = 84C*) I 100 Amperes C C Peak Collector Current I 200** Amperes CM Emitter Current*** (T = 25C) I 100 Amperes C E Peak Emitter Current*** I 200** Amperes EM Maximum Collector Dissipation (T = 25C*, T 150C) P 672 Watts C j C Mounting Torque, M5 Main Terminal 30 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 10mA, V = 10V 6.0 7.0 8.0 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 100A, V = 15V, T = 25C 2.1 3.0 Volts CE(sat) C GE j I = 100A, V = 15V, T = 125C 2.4 Volts C GE j Total Gate Charge Q V = 600V, I = 100A, V = 15V 500 nC G CC C GE Emitter-Collector Voltage** V I = 100A, V = 0V 3.8 Volts EC E GE Dynamic Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 17.5 nf ies Output Capacitance C V = 10V, V = 0V 1.5 nf oes CE GE Reverse Transfer Capacitance C 0.34 nf res Inductive Turn-on Delay Time t 100 ns d(on) Load Rise Time t V = 600V, I = 100A, 70 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 3.1, 400 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 350 ns f Diode Reverse Recovery Time*** t Switching Operation, 150 ns rr Diode Reverse Recovery Charge*** Q I = 100A 5.0 C rr E *T , T measured point is just under the chips. C f **Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 10/07