MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE CM100DY-24NF IC ...................................................................100A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 17 23 23 17 C2E1 E2 C1 12 12 12 3-M5 NUTS 4 2-6.5 MOUNTING HOLES 800.25 TAB 110. t=0.5 16 7 16 7 16 C2E1 E2 C1 LABEL CIRCUIT DIAGRAM Feb. 2009 1 48 +1.0 29 0.5 13 G1E1 E2 G2 21.2 7.5 418 4 20 (14) G1 E1 E2 G2MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol Parameter Conditions Ratings Unit VCES Collector-emitter voltage G-E Short 1200 V VGES Gate-emitter voltage C-E Short 20 V *3 100 A IC DC, TC = 113C Collector current ICM Pulse (Note 2) 200 A 100 IE (Note 1) A Emitter current IEM (Note 1) 200 A Pulse (Note 2) PC (Note 3) Maximum collector dissipation TC = 25C 650 W 40 ~ +150 Tj Junction temperature C Tstg Storage temperature 40 ~ +125 C Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms 2.5 ~ 3.5 N m Main terminals M5 screw Torque strength Mounting M6 screw 3.5 ~ 4.5 N m g Weight Typical value 310 ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Limits Symbol Parameter Test conditions Unit Min. Typ. Max. ICES Collector cutoff current VCE = VCES, VGE = 0V 1 mA VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 687V IGES Gate leakage current VGE = VGES, VCE = 0V 0.5 A 2.5 Tj = 25C 1.8 Collector-emitter saturation voltage VCE(sat) IC = 100A, VGE = 15V V Tj = 125C 2.0 Input capacitance Cies 23 nF VCE = 10V Coes Output capacitance 2 nF VGE = 0V Cres Reverse transfer capacitance 0.45 nF Total gate charge QG VCC = 600V, IC = 100A, VGE = 15V 675 nC td(on) Turn-on delay time 120 ns Turn-on rise time tr VCC = 600V, IC = 100A 80 ns Turn-off delay time td(off) VGE = 15V 450 ns tf Turn-off fall time 350 RG = 3.1 , Inductive load ns Reverse recovery time trr (Note 1) IE = 100A 150 ns Qrr (Note 1) Reverse recovery charge 5.0 C VEC(Note 1) Emitter-collector voltage 3.2 IE = 100A, VGE = 0V V Rth(j-c)Q 0.19 K/W IGBT part (1/2 module) *1 Thermal resistance 0.35 Rth(j-c)R FWDi part (1/2 module) K/W *2 Contact thermal resistance 0.07 Rth(c-f) Case to heat sink, Thermal compound Applied (1/2 module) K/W *3 Thermal resistance K/W Rth(j-c)Q Case temperature measured point is just under the chips 0.13 3.1 31 RG External gate resistance 1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. * 2 : Typical value is measured by using thermally conductive grease of = 0.9 W/(m K) . * 3 : Case temperature (Tc) measured point is just under the chips. * If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Feb. 2009 2