< IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I .................................... 1 0 0 A C Collector-emitter voltage V ...................... 1 2 0 0 V CES Maximum junction temperature T .............. 1 7 5 C jm a x Flat base Type Copper base plate (non-plating) Tin plating pin terminals RoHS Directive compliant sixpack (3 Inverter) Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL t=0.8 SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Tolerance P(30~32) P1(16~18) 0.5 to 3 0.2 over 3 to 6 0.3 GUP(1) GVP(5) GWP(9) over 6 to 30 0.5 EUP(2) EVP(6) EWP(10) over 30 to 120 0.8 over 120 to 400 1.2 U(27~29) V(24~26) W(21~23) TH1(19) GUN(3) GVP(7) GWN(11) TH2(20) EUN(4) EVP(8) EWN(12) N(33~35) N1(13~15) Publication Date : December 2013 1 NTC < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (T =25 C, unless otherwise specified) j INVERTER PART IGBT/DIODE Symbol Item Conditions Rating Unit V Collector-emitter voltage G-E short-circuited 1200 V CES V Gate-emitter voltage C-E short-circuited 20 V GES (Note2, 4) I DC, T =107 C 100 C C Collector current A (Note3) I Pulse, Repetitive 200 CRM (Note2, 4) P Total power dissipation T =25 C 625 W to t C (Note1) (Note2) I DC 100 E Emitter current A (Note1) (Note3) I Pulse, Repetitive 200 ERM MODULE Symbol Item Conditions Rating Unit V Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V is o l T Maximum junction temperature Instantaneous event (overload) 175 j m ax C (Note4) T Maximum case temperature 125 C m ax T Operating junction temperature Continuous operation (under switching) -40 ~ +150 j op C T Storage temperature - -40 ~ +125 s tg ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise specified) j INVERTER PART IGBT/DIODE Limits Symbol Item Conditions Unit Min. Typ. Max. I Collector-emitter cut-off current V =V , G-E short-circuited - - 1.0 mA CES CE CES I Gate-emitter leakage current V =V , C-E short-circuited - - 0.5 A GES GE GES V Gate-emitter threshold voltage I =10 mA, V =10 V 5.4 6.0 6.6 V GE(th) C CE I =100 A, V =15 V, T =25 C - 1.80 2.25 j C GE V CEsat Refer to the figure of test circuit T =125 C - 2.00 - V j (Terminal) (Note5) T =150 C - 2.05 - j Collector-emitter saturation voltage I =100 A, T =25 C - 1.70 2.15 C j V CEsat V =15 V, T =125 C - 1.90 - V j GE (Chip) (Note5) T =150 C - 1.95 - j C Input capacitance - - 10 ie s C Output capacitance V =10 V, G-E short-circuited - - 2.0 nF oes CE C Reverse transfer capacitance - - 0.17 r es Q Gate charge V =600 V, I =100 A, V =15 V - 210 - nC G CC C GE t Turn-on delay time - - 300 d( on) V =600 V, I =100 A, V =15 V, CC C GE t Rise time - - 200 r ns t Turn-off delay time - - 600 d ( o ff ) R =6.2 , Inductive load G t Fall time - - 300 f I =100 A, G-E short-circuited, T =25 C - 2.60 3.40 E j (Note1) V EC Refer to the figure of test circuit T =125 C - 2.16 - V j (Terminal) (Note5) T =150 C - 2.10 - j Emitter-collector voltage I =100 A, T =25 C - 2.50 3.30 j E (Note1) V EC G-E short-circuited, T =125 C - 2.06 - V j (Chip) (Note5) T =150 C - 2.00 - j (Note1) t Reverse recovery time V =600 V, I =100 A, V =15 V, - - 300 ns rr CC E GE (Note1) Q Reverse recovery charge R =6.2 , Inductive load - 2.7 - C rr G E Turn-on switching energy per pulse V =600 V, I =I =100 A, - 5.9 - on CC C E mJ E Turn-off switching energy per pulse V =15 V, R =6.2 , T =150 C, - 9.7 - off GE G j (Note1) E Reverse recovery energy per pulse Inductive load - 9.7 - mJ rr Main terminals-chip, per switch, R Internal lead resistance - - 2.2 m CC +EE (Note4) T =25 C C r Internal gate resistance Per switch - 0 - g Publication Date : December 2013 2