X-On Electronics has gained recognition as a prominent supplier of CM600HA-24H across the USA, India, Europe, Australia, and various other global locations. CM600HA-24H are a product manufactured by Powerex. We provide cost-effective solutions for CM600HA-24H, ensuring timely deliveries around the world.

CM600HA-24H Powerex

CM600HA-24H electronic component of Powerex
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See Product Specifications
Part No.CM600HA-24H
Manufacturer: Powerex
Category: Unclassified
Description: Trans IGBT Module N-CH 1.2KV 600A 4-Pin
Datasheet: CM600HA-24H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 439.6417 ea
Line Total: USD 439.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 439.6417

   
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We are delighted to provide the CM600HA-24H from our Powerex manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CM600HA-24H and other electronic components in the Powerex manufacturer and beyond.

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CM600HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD H-Series Module 600 Amperes/1200 Volts A C Y - THD (2 TYP.) M E C E P B D E U R G T Description: V - THD (2 TYP.) Powerex IGBTMOD Modules are designed for use in switching Q applications. Each module consists L G N X - DIA. of one IGBT Transistor in a single (4 TYP.) Z configuration with a reverse- J J connected super-fast recovery S free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- F H K bly and thermal management. Features: h Low Drive Power W h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation E C (20-25kHz) h Isolated Baseplate for Easy E Heat Sinking G Applications: h AC Motor Control Outline Drawing and Circuit Diagram h Motion/Servo Control Dimensions Inches Millimeters Dimensions Inches Millimeters h UPS A 4.33 110.0 N 0.69 17.5 h Welding Power Supplies h Laser Power Supplies B 3.15 80.0 P 0.61 15.5 C 3.660.008 93.00.25 Q 0.51 13.0 Ordering Information: D 2.440.008 62.00.25 R 0.49 12.5 Example: Select the complete part E 1.57 40.0 S 0.45 11.5 module number you desire from the table below -i.e. CM600HA-24H F 1.42 Max. 36.0 Max. T 0.43 11.0 is a 1200V (V ), 600 Ampere CES G 1.14 29.0 U 0.35 9.0 Single IGBTMOD Power Module. H 1.00 Max. 25.5 Max. V M8 Metric M8 Type Current Rating V CES J 0.96 25.0 W 0.28 7.0 Amperes Volts (x 50) K 0.94 24.5 X 0.256 Dia. Dia. 6.50 CM 600 24 L 0.83 21.0 Y M4 Metric M4 M 0.71 18.0 Z 0.12 3.04 193Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24H Single IGBTMOD H-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM600HA-24H Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage V 20 Volts GES Collector Current I 600 Amperes C Peak Collector Current I 1200* Amperes CM Diode Forward Current I 600 Amperes F Diode Forward Surge Current I 1200* Amperes FM Power Dissipation P 4100 Watts d Max. Mounting Torque M8 Terminal Screws 95 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 560 Grams V Isolation V 2500 Volts RMS * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 2.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 60mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 600A, V = 15V 2.5 3.4** Volts CE(sat) C GE I = 600A, V = 15V, T = 150C 2.25 Volts C GE j Total Gate Charge Q V = 600V, I = 600A, V = 15V 3000 nC G CC C GS Diode Forward Voltage V I = 600A, V = 0V 3.5 Volts FM E GS ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 120 nF ies Output Capacitance C V = 0V, V = 10V, f = 1MHz 42 nF oes GE CE Reverse Transfer Capacitance C 24 nF res Resistive Turn-on Delay Time t 300 ns d(on) Load Rise Time t V = 600V, I = 600A, 700 ns r CC C Switching Turn-off Delay Time t V = V = 15V, R = 2.1 450 ns d(off) GE1 GE2 G Times Fall Time t 350 ns f Diode Reverse Recovery Time t I = 600A, di /dt = 1200A/s 250 ns rr E E Diode Reverse Recovery Charge Q I = 600A, di /dt = 1200A/s 4.46 C rr E E Thermal and Mechanical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Per IGBT 0.035 C/W th(j-c) Thermal Resistance, Junction to Case R Per FWDi 0.06 C/W th(j-c) Contact Thermal Resistance R Per Module, Thermal Grease Applied 0.035 C/W th(c-f) 194

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